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  • 收录类型=EIx
  • 人物=谭永胜x
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16 条 记 录,以下是 1-16

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题名 作者 出处 被引量 操作
Structural, optical and magnetic properties of Eu-doped ZnO filmsTan, Yongsheng[1,2];Fang, ZeboJOURNAL OF ALLOYS AND COMPOUNDS57
Bi and Al co-doped anatase titania for photosensitized degradation of Rhodamine B under visible-light irradiationWei, Shunhang[1];Gao, Jian[1];CERAMICS INTERNATIONAL14
Near-infrared-II photodetection realized by introducing organic-inorganic charge-transfer-complex photosensitive material into pentacene phototransistorWang, Haonan[1];Liu, Shiyan[1]ORGANIC ELECTRONICS6
非晶Er2O3高k栅介质薄膜的制备及结构特性研究方泽波[1];谭永胜[1];朱燕艳[2];《无机材料学报》6
Improvement in efficiency and Reproducibility for FAPbI3 Solar Cells with Rapid CrystallizationLi, Qiang[1];Xiang, Yanhong[1]ENERGY & FUELS4
Investigation of the source-drain electrodes/the active layer contact-effect on the performance of organic phototransistorYao, Bo[1];Li, Yan[2];Fang, ZeSYNTHETIC METALS3
Structural and Electrical Characteristics of Amorphous ErAlO Gate Dielectric FilmsZhu Yan-Yan[1,2];Fang Ze-Bo[1]CHINESE PHYSICS LETTERS3
Reliability study of the band gap of rare earth oxides measured by XPS spectraYang Xiaofeng[1,2];Tan YongsheMICRO-NANO TECHNOLOGY XIV, PTS 1-42
Gold nanoparticles-decorated N,N '-dioctyl-3,4,9,10-perylene tetracarboxylic diimide active layer towards remarkably enhanced visible-light photoresponse of an n-type organic phototransistorWang, Haonan[1];Li, Yan[1];YaoTHIN SOLID FILMS2
单晶Tm_2O_3高k栅介质漏电流输运机制研究杨晓峰[1,2];谭永胜[2];方泽波[2《功能材料》1
Er_2O_3薄膜型热辐射体的制备与性能研究刘士彦[1];姚博[1];谭永胜[1];徐《物理学报》0
Band Alignment and Band Gap Characterization of La2O3 Films on Si Substrates Grown by Radio Frequency Magnetron SputteringLiu Qi-Ya[1,2];Fang Ze-Bo[2];JCHINESE PHYSICS LETTERS0
Multi-band reprogrammable phase-change metasurface spectral filters for on-chip spectrometersZheng, Qilin[1,2];Liang, Li[1]OPTICS EXPRESS0
Electrodeposition of lead dioxide induces the fabrication of perovskite FAPbI3 film and electron-transport-layer-free solar cellsLi, Qiang[1]; Lu, Congrong[1];Solar Energy0
Band offsets of La2O3 films on Ge substrates grown by radio frequency magnetron sputteringLiu, Qiya[1,2]; Fang, Zebo[1];Materials Letters0
Energy band diagram of metal/Tm2O3/Si stack structure acquired from the study of leakage current mechanismsYao, Bo[1]; Zhu, Yanyan[1]; FaThin Solid Films0
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