文献类型：期刊文献

中文题名：Band Alignment and Band Gap Characterization of La2O3 Films on Si Substrates Grown by Radio Frequency Magnetron Sputtering

英文题名：Band Alignment and Band Gap Characterization of La2O3 Films on Si Substrates Grown by Radio Frequency Magnetron Sputtering

作者：Liu Qi-Ya[1,2];Fang Ze-Bo[2];Ji Ting[3];Liu Shi-Yan[2];Tan Yong-Sheng[2];Chen Jia-Jun[1];Zhu Yan-Yan[2]

机构：[1]China West Normal Univ, Coll Phys & Elect Informat, Nanchong 637002, Peoples R China;[2]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China;[3]Taiyuan Univ Technol, Coll Phys & Optoelect, Key Lab Adv Transducers & Intelligent Control Sys, Taiyuan 030024, Peoples R China

年份：2014

卷号：31

期号：2

中文期刊名：中国物理快报：英文版

外文期刊名：CHINESE PHYSICS LETTERS

收录：SCI-EXPANDED(收录号：WOS:000332235100031)、CSTPCD、、EI(收录号：20220711663639)、Scopus(收录号：2-s2.0-84893563946)、WOS、CSCD、CSCD2013_2014

基金：Supported by the National Natural Science Foundation of China under Grant Nos 51272159, 11004130 and 11204202, the Natural Science Foundation of Zhejiang Province under Grant Nos Y6100596 and LQ13A040004, and the Shanghai Educational Commission under Grant No 12zz175.

语种：英文

中文关键词：射频磁控溅射法;Si衬底;氧化镧;薄膜;带隙;Si(100);表征;对齐

外文关键词：Radio waves - Energy dissipation - Gate dielectrics - Spectrum analysis - Lanthanum oxides - Silicon - Heterojunctions - X ray photoelectron spectroscopy - Magnetron sputtering - High-k dielectric

外文摘要：La2O3 films are grown on Si (100) substrates by the radio-frequency magnetron sputtering technique. The band alignment of the La2O3/Si heterojunction is analyzed by the x-ray photoelectron spectroscopy. The valence-band and the conduction-band offsets of La2O3 films to Si substrates are found to be 2.40 +/- 0.1 and 1.66 +/- 0.3 eV, respectively. Based on O 1s. energy loss spectrum analysis, it can be noted that the energy gap of La2O3 films is 5.18 +/- 0.2 eV, which is confirmed by the ultra-violet visible spectrum. According to the suitable band offset and large band gap, it can be concluded that La2O3 could be a promising candidate to act as high-kappa gate dielectrics.