文献类型：期刊文献

英文题名：Band offsets of La2O3 films on Ge substrates grown by radio frequency magnetron sputtering

作者：Liu, Qiya[1,2]; Fang, Zebo[1]; Liu, Shiyan[1]; Tan, Yongsheng[1]; Chen, Jiajun[2]

机构：[1] Department of Physics, Shaoxing University, Shaoxing, Zhejiang 312000, China; [2] College of Physics and Electronic Information, China West Normal University, Nanchong, Sichuan 637002, China

年份：2014

卷号：116

起止页码：43

外文期刊名：Materials Letters

收录：EI(收录号：20134717016456)、Scopus(收录号：2-s2.0-84887854954)

语种：英文

外文关键词：High-k dielectric - Germanium - Energy gap - Lanthanum oxides - Spectrum analysis - Energy dissipation - Gate dielectrics - Heterojunctions - Radio waves

外文摘要：La2O3 films were grown on Ge substrates by radio frequency magnetron sputtering technique. The band alignment of the La 2O3/Ge heterojunction was analyzed by X-ray photoelectron spectroscopy. The valence-band and the conduction-band offsets of La 2O3 to Ge are found to be -2.76±0.1 eV and 1.75±0.3 eV, respectively. Based on O 1s energy loss spectrum analysis, it can be noted that the energy gap of La2O3 is 5.18±0.2 eV. According to the suitable band offset and large band gap, it can be concluded that La2O3 could be a promising candidate to act as high-k gate dielectrics. ? 2013 Elsevier B.V. All rights reserved.