文献类型：期刊文献

英文题名：Energy band diagram of metal/Tm2O3/Si stack structure acquired from the study of leakage current mechanisms

作者：Yao, Bo[1]; Zhu, Yanyan[1]; Fang, Zebo[1]; Tan, Yongsheng[1]; Liu, Shiyan[1]; Yuan, Junjun[1]; Qiu, Qinglin[1]

机构：[1] Department of Physics, Shaoxing University, Shaoxing, 312000, China

年份：2016

卷号：611

起止页码：52

外文期刊名：Thin Solid Films

收录：EI(收录号：20162302453685)、Scopus(收录号：2-s2.0-84971357164)

语种：英文

外文关键词：Gate dielectrics - Leakage currents - High-k dielectric - Metals - Substrates - Schottky barrier diodes - Band diagram - Dielectric devices - Aluminum compounds - MOS devices

外文摘要：Metal-oxide-semiconductor capacitors with Tm2O3 high-k gate dielectrics were fabricated. Based on the I-V measurements of Al/Tm2O3/Si devices at different temperatures, the leakage current mechanisms for Al/Tm2O3/Si stack structures have been extracted. The results reveal that the dominant conduction mechanisms under substrate injection and gate injection are Schottky emission and Frenkel-Poole conduction, respectively. The determined Schottky barrier height between Tm2O3 and Si is 1.68 ± 0.2 eV. The further I-V measurements of Fowler-Nordheim tunneling characteristics at 77 K is conducted to the conduction-band offset at the interfaces of Al/Tm2O3 and Pt/Tm2O3, which are 2.95 eV and 1.75 eV, respectively. The energy band diagrams of the Al (Pt)/Tm2O3/Si stack structures were obtained from the above results, which show that Tm2O3 is a promising candidate for use as high-k gate dielectric on high-performance substrates. ? 2016 Elsevier B.V. All rights reserved.