文献类型：期刊文献

中文题名：Structural and Electrical Characteristics of Amorphous ErAlO Gate Dielectric Films

英文题名：Structural and Electrical Characteristics of Amorphous ErAlO Gate Dielectric Films

作者：Zhu Yan-Yan[1,2];Fang Ze-Bo[1];Tan Yong-Sheng[1]

机构：[1]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China;[2]Shanghai Univ Elect Power, Dept Math & Phys, Shanghai 200090, Peoples R China

年份：2012

卷号：29

期号：8

中文期刊名：中国物理快报：英文版

外文期刊名：CHINESE PHYSICS LETTERS

收录：SCI-EXPANDED(收录号：WOS:000307667100064)、CSTPCD、、EI(收录号：20220711656659)、Scopus(收录号：2-s2.0-84864925570)、CSCD2011_2012、WOS、CSCD

基金：Supported by the National Natural Science Foundation of China under Grant Nos 60806031 and 11004130, and the Natural Science Foundation of Zhejiang Province under Grant No Y6100596.

语种：英文

中文关键词：film;roughness;annealed;

外文关键词：Atomic force microscopy - Gate dielectrics - High-k dielectric - Leakage currents - Silicon compounds - Aluminum compounds - Electric fields - Magnetron sputtering - Amorphous films - Annealing

中文摘要：Ultrathin high-k dielectric ErAlO films were deposited on Si(100)substrates by using radio-frequency magnetron sputtering.The very flat surface of the annealed film with a rms roughness less than 0.25 nm was observed by using an atomic force microscope.The film shows good thermal stability when annealing at 900℃ for 30 s in the O_(2) ambient.The effective dielectric constant of the film is around 15.2,and a low leakage current of 8.4×10^(-5) A/cm^(2) at an electric field of 1 MV/cm was achieved for the film with the equivalent oxide thickness of 2.0 nm after annealing.

外文摘要：Ultrathin high-k dielectric ErAlO films were deposited on Si (100) substrates by using radio-frequency magnetron sputtering. The very flat surface of the annealed film with a rms roughness less than 0.25nm was observed by using an atomic force microscope. The film shows good thermal stability when annealing at 900 degrees C for 30 s in the O-2 ambient. The effective dielectric constant of the film is around 15.2, and a low leakage current of 8.4 x 10(-5) A/cm(2) at an electric field of 1 MV/cm was achieved for the film with the equivalent oxide thickness of 2.0 nm after annealing.