文献类型：期刊文献

英文题名：Gold nanoparticles-decorated N,N '-dioctyl-3,4,9,10-perylene tetracarboxylic diimide active layer towards remarkably enhanced visible-light photoresponse of an n-type organic phototransistor

作者：Wang, Haonan[1];Li, Yan[1];Yao, Bo[1];Xu, Haitao[1];Liu, Shiyan[1];Tan, Yongsheng[1];Luo, Xiao[2];Xi, Cuilu[1];Wu, Xinfei[1];Zhang, Yifan[1];Deng, Jie[1];Fang, Zebo[1]

机构：[1]Shaoxing Univ, Dept Elect Engn, Shaoxing 312000, Peoples R China;[2]Univ Elect Sci & Technol China UESTC, State Key Lab Elect Thin Films & Integrated Devic, Sch Optoelect Sci & Engn, Chengdu 610054, Peoples R China

年份：2021

卷号：718

外文期刊名：THIN SOLID FILMS

收录：SCI-EXPANDED(收录号：WOS:000607133400007)、、EI(收录号：20205109650935)、Scopus(收录号：2-s2.0-85097652532)、WOS

基金：This work was supported by the Zhejiang Province Public Welfare Technology Application Research Project (Grant No. LGG21F050001), the National Natural Science Foundation of China (Grant Nos. 51872186, 11905133, 21903084), the Natural Science Foundation of Zhejiang province (Grant No. LQ19F040002), the Science and Technology Planning Project of Shaoxing City (Grant No. 2017B70063) and the Scientific Research Project of Shaoxing University (Grant No. 2019LG1001). The authors would like to thank Dr. Biyun Shi on SEM of samples.

语种：英文

外文关键词：Gold nanoparticles; N-type; Red light detector; Hyperchromic effect; Organic phototransistor

外文摘要：Metal nanostructures exhibit distinct physical properties from macroscopic objects, which have been widely applied to organic optoelectmnic device. N, N'-dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C8) is one of the few air-stable, high mobility n-type semiconductor, which is usually used to fabricate green or white light detectors due to its main absorption concentrated in the range 450 - 600 nm. In this paper, a high performance red light sensor was achieved by PTCDI-C8 based organic phototransistor (OPT) with the optimized gold nanoparticles (AuNPs) modified layer, the photosensitivity, photoresponsivity, specific detectivity and the external quantum efficiency (EQE) of which can reach 6.21 x 10(5), 24.12 A/W, 2.85 x 10(11) Jones and 453.58% at 660 nm, respectively. Additionally, the AuNPs-modified OPT also gained a significant improvement in EQE under green light illumination at 532 nm compared with single PTCDI-C8 layer OPT. The photophysical mechanisms of introducing AuNPs to improve device performance were explored.