文献类型：会议论文

英文题名：Thermal Stability of Er2O3-Al2O3 Thin Films Grown on Si Substrates

作者：Pan, Xiaojie[1];Zhang, Zhifang[1];Zhu, Yanyan[1];Fang, Zebo[2];Cao, Haijing[1]

机构：[1]Shanghai Univ Elect Power, Dept Phys, Shanghai 200090, Peoples R China;[2]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China

会议论文集：Chinese Materials Conference (CMC)

会议日期：JUL 06-12, 2017

会议地点：Yinchuan, PEOPLES R CHINA

语种：英文

外文关键词：Rare earth oxides; Thermal stability; X-ray photoelectron spectroscopy

外文摘要：The thermal stability of Er2O3 and Al2O3 doped Er2O3 thin films deposited on Si substrates has been investigated by x-ray diffraction and x-ray photoelectron spectroscopy. The structures for the as-grown Er2O3 and Al2O3 doped Er2O3 films on Si substrates are found to convert from amorphous to polycrystalline at the annealing temperatures above 450 degrees C in O-2 ambience. The crystallinity and the surfaces roughness of Er2O3 thin films on p-type Si (001) substrates are decreased if Al2O3 is doped in them. However, the result is complicated if these Er2O3 and Al2O3 doped Er2O3 thin films deposited on n-type Si(001) substrates.