文献类型：会议论文

英文题名：Charge storage characteristics of Ni-NiOx core-shell nanocrystals embedded in SiO2 gate oxide

作者：Ni, Henan[1,2]; Wu, Liangcai[3]; Hui, Chun[2]; Fang, Zebo[1]; Li, Zhibin[1]

机构：[1] Department of Physics, Shaoxing University, Shaoxing, Zhejiang, 312000, China; [2] Research Institute of Micro/Nano Science and Technology, Shanghai Jiaotong University, Shanghai 200030, China; [3] Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China

会议论文集：Micro-Nano Technology XIV

会议日期：November 4, 2012 - November 7, 2012

会议地点：Hangzhou, China

语种：英文

外文关键词：Nickel compounds - Scanning electron microscopy - Metals - Shells (structures) - High resolution transmission electron microscopy - Nonvolatile storage - Interface states - MOS devices - Oxide semiconductors - Electrons - Nanocrystals

外文摘要：The memory characteristics of Ni-NiOx core-shell nanocrystals (NCs) in the metal-oxide-semiconductor (MOS) capacitor structure were investigated. Scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM) confirm the formation of the spherically shaped, well isolated, and uniformly distributed Ni NCs surrounded by NiOx (1nm) in SiO2 gate oxide. The Ni-NiOx NCs embedded in SiO2 exhibited a large memory window of 9.8 V as well as efficient programming/erasing speed and improved retention characteristics of about 10 years. A possible band model needed for injection efficiency of carriers was given by considering the electron/hole barrier width and the additional interface states through the NiOx shell layer. ? 2013 Trans Tech Publications Ltd, Switzerland.