文献类型：期刊文献

英文题名：Electronic thermal Hall effect in silicene

作者：Yan, Yonghong[1];Ye, Weiguo[1];Wu, Haifei[1];Zhao, Hui[2,3]

机构：[1]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China;[2]Tongji Univ, Minist Educ, Key Lab Adv Microstructure Mat, Shanghai 200092, Peoples R China;[3]Tongji Univ, Dept Phys, Shanghai 200092, Peoples R China

年份：2017

卷号：90

期号：10

外文期刊名：EUROPEAN PHYSICAL JOURNAL B

收录：SCI-EXPANDED(收录号：WOS:000413404000004)、、EI(收录号：20174204285951)、Scopus(收录号：2-s2.0-85031496557)、WOS

基金：The work was supported by the NSFC (Grant Nos. 11204180, 51202149, and 11474218).

语种：英文

外文关键词：Hall effect - Silicene

外文摘要：We theoretically investigate the electronic thermal Hall effect in silicene via a discrete four-band model. Based on the linear response theory, a formalism to address the transverse thermal conductivity is developed. In the absence of an exchange field, the transverse thermal conductivity vanishes due to the time-reversal symmetry. The transverse conductivity becomes finite in the presence of an exchange field and exhibits several peaks with opposite signs. The peak values increase as the field becomes strong. However, as the temperature becomes high, the peak values begin to decay. The results may be helpful in exploring spin caloritronics based on silicene.