文献类型：期刊文献

英文题名：Enhanced photoresponse of epitaxially grown ZnO by MoO3 surface functionalization

作者：Yang, XiangDong[1];Wang, HaiTao[1];Dou, WeiDong[2];Wang, Peng[3];Yang, XuXin[1];Pan, XinHua[4];Lu, Bin[4];Mao, HongYing[1]

机构：[1]Hangzhou Normal Univ, Dept Phys, Hangzhou 311121, Peoples R China;[2]Shaoxing Univ, Phys Dept, Lab Low Dimens Carbon Mat, Shaoxing 312000, Peoples R China;[3]Shandong Univ Sci & Technol, Coll Elect & Informat Engn, Dept Appl Phys, Qingdao 266590, Peoples R China;[4]Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

年份：2020

卷号：22

期号：4

起止页码：2399

外文期刊名：PHYSICAL CHEMISTRY CHEMICAL PHYSICS

收录：SCI-EXPANDED(收录号：WOS:000510729400057)、、WOS

基金：This research was funded by the National Natural Science Foundation of China (Grants No. 61401136, 11504207), the Natural Science Foundation of Zhejiang Province (Grants No. LY18F010019, LY17A040009, LY19F040005), and the Innovation Project in Hangzhou for Returning Scholars.

语种：英文

外文摘要：ZnO has broad applications in optoelectronic devices, including ultraviolet light emitters and photodetectors. Herein we report the impact of MoO3 surface functionalization on the photoresponse of epitaxially grown ZnO. Under illumination with 350 nm UV light, the photocurrent of ZnO is found to be enhanced by 2.87 times after the deposition of 0.2 nm MoO3. As corroborated by in situ ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy results, the enhanced photoresponse derives from MoO3 related gap states within the band gap of ZnO and larger upward band bending at the interface, which is attributed to the strong electron transfer from ZnO to MoO3. Moreover, photoluminescence results reveal that the recombination probability of the photo-generated charge carriers in ZnO is reduced after MoO3 surface functionalization.