文献类型：期刊文献

中文题名：Optimization of electrical performance and stability of fully solution-drivenα-InGaZnO thin-film transistors by graphene quantum dots

作者：Xiaofen Xu[1];Gang He[1];Leini Wang[1];Wenhao Wang[1];Shanshan Jiang[2];Zebo Fang[3]

机构：[1]School of Materials Science and Engineering,Anhui University,Hefei 230601,China;[2]School of Integration Circuits,Anhui University,Hefei 230601,China;[3]School of Mathematical Information,Shaoxing University,Shaoxing 312000,China

年份：2023

期号：10

起止页码：100

中文期刊名：材料科学技术:英文版

外文期刊名：Journal of Materials Science & Technology

收录：CSTPCD、、Scopus、CSCD2023_2024、CSCD、PubMed

基金：supported by the National Natural Science Foundation of China(No.11774001);the Anhui Project(No.Z010118169);the Open Fund Project of Zhejiang Engineering Research Center of MEMS in Shaoxing University(No.MEMSZ-JERC2202).

语种：英文

中文关键词：Thin-film transistor;α-InGaZnO;Graphene quantum dots;Stability

中文摘要：This work presents solution-processed high-performance graphene quantum dots(GQDs)decorated amor-phous InGaZnO(α-IGZO)thin-film transistors(TFTs)based on ZrO x as gate dielectrics.Compare with pure IGZO TFTs,GQDs-modifiedα-IGZO TFTs devices with optimized doping content have demonstrated better performances,including a larger field-effect mobility(μFE)of 35.91 cm 2 V^(-1)s^(-1),a higher on/offcurrent ratio(I ON/I OFF)of 5.04×10^(8),a smaller subthreshold swing(SS)of 0.11 V dec^(-1)and a smaller interfacial trap states(D it,1.57×10^(12)cm^(?2)).Moreover,the GQDs-doped IGZO TFTs with a doping concentration of 0.5 mg ml^(-1)have shown excellent stability under bias stress and illumination stress conditions.To demonstrate the potential applications ofα-IGZO TFTs in logic circuits,a resistor-loaded unipolar inverter based on GQDs-IGZO/ZrO x has been integrated,demonstrating good dynamic behavior and a high gain of 9.3.Low-frequency noise(LFN)characteristics of GQDs-IGZO/ZrO x TFTs have suggested that the fluctua-tions in mobility are the noise source.Based on all the experimental findings,it can be concluded that solution-processed GQDs-IGZO/ZrO x TFT may envision promising applications in optoelectronics.