文献类型：期刊文献

中文题名：单晶Tm_2O_3薄膜的制备与F-N隧穿机制

英文题名：Fabrication of Single Crystalline Tm_2O-3 Thin Films and Its F-N Tunneling Mechanism

作者：杨百良[1];杨晓峰[1];刘士彦[1]

机构：[1]绍兴文理学院物理与电子信息系

年份：2013

期号：2

起止页码：149

中文期刊名：河北师范大学学报：自然科学版

收录：CSTPCD、、北大核心2011、北大核心

基金：国家自然科学基金(60806031;11004130);浙江省自然科学基金(Y6100596);浙江省自然科学基金(Y4090148)

语种：中文

中文关键词：分子束外延;单晶Tm2O3;F—N隧穿特性;高K栅介质材料

外文关键词：MBE; single crystalline Tm2O3; F-N tunneling; high-K material

中文摘要：采用分子束外延方法结合原位退火生长技术在Si(001)衬底上制备了Tm2O3薄膜,XRD测量结果表明所制备样品为单晶Tm2O3.在低温环境下,采用MOS电容结构对薄膜进行I-V测试,研究了样品的F-N隧穿特性,得出Pt/Tm2O3和Al/Tm2O3的势垒高度分别为2.95,1.8eV.从能带的角度表明Tm2O3是一种高K栅介质候选材料.

外文摘要：The single crystalline Tm2O3 thin films were deposited on p-type Si（001）substrates through molecular beam epitaxy（MBE）and in situ annealed. The results of X-ray diffracton （XRD） show that the Tm2O3 thin films were single crystalline. I-V characteristics of the Tm2O3 thin films as gate dielectric in a MOS structure were measured at low temperature. The barrier heights of the Pt/Tm2O3 and AI/Tm2O3 contacts were obtained to be 2.95 eV and 1.8 eV, respectively. From the band offset point of view, single crystalline Tm2 03 thin film is believed to be a candidate as high-K material.