文献类型：期刊文献

英文题名：Ultra-low dark current and high sensitivity lead-free perovskite-like photodetector realized by anti-solvent optimization Cs₃Bi₂I₉ amorphous film

作者：Zhang, Hengkang[1];Yin, Leyan[1];Wang, Yurui[1];Chen, Yuxing[1];Liu, Shiyan[1];Ye, Qiufeng[1];Ren, Kuankuan[1];Yao, Zhiyao[1];Wang, Bingquan[1];Yao, Bo[1];He, Gang[2];Yu, Qing[3];Lv, Xinmin[3];Fang, Zebo[1]

机构：[1]Shaoxing Univ, Zhejiang Engn Res Ctr MEMS, Shaoxing 312000, Peoples R China;[2]Anhui Univ, Sch Mat Sci & Engn, Hefei 230601, Peoples R China;[3]United Nova Technol Co Ltd, Shaoxing 312000, Peoples R China

年份：2024

卷号：309

外文期刊名：SYNTHETIC METALS

收录：SCI-EXPANDED(收录号：WOS:001358091600001)、、EI(收录号：20244617349067)、Scopus(收录号：2-s2.0-85208501373)、WOS

基金：This work was supported by the Zhejiang Province Public Welfare Technology Application Research Project (Grant no. LGG21F050001) , The University Synergy Innovation Program of Anhui Province (No. GXXT-2022-012) , Scientific Research Project of Colleges and Univer-sities in Anhui Province (No. 2022AH050113) , the Science and Tech-nology Planning Project of Shaoxing City (No. 2023B41006) , the Shaoxing Public Welfare Project (Grant no. 2023A11002) .

语种：英文

外文关键词：Anti-solvent; Photodetector; Spin-coating method; Cs3Bi2I9; Anti-solvent; Photodetector; Spin-coating method

外文摘要：Compared with lead halide perovskite, bismuth-based perovskite has lower toxicity and air stability, demonstrating enormous potential for application, among them, Cs3Bi2I9 materials has been researched as an alternative to lead-based perovskite for application of optoelectronic devices. It is crucial for the realization of high-performance photodetectors which need high-quality perovskite thin films. Here, we prepared a lead-free, all-inorganic, Cs3Bi2I9 perovskite-like amorphous films by spin coating method, and diethyl ether was added as an anti-solvent at different times of spin-coating. The results show that the homogeneous and dense Cs3Bi2I9 amorphous films can be obtained by adding anti-solvent at 14 s. Furthermore, Cs3Bi2I9 perovskite-like UV photodetector achieved extremely low dark current around similar to pA range, high sensitivity of 1.10 x 10(4) was fabricated. Our research shows that the preparation of Cs3Bi2I9 amorphous films by the simple antisolvent-assisted spin-coating method are very promising for optoelectronic device.