文献类型：期刊文献

英文题名：Interface Optimization and Modulation of Leakage Current Conduction Mechanism of Yb2O3/GaSb MOS Capacitors with ALD-Driven Laminated Interlayers

作者：Hao, Lin[1];He, Gang[1,2];Zheng, Ganhong[1];Gao, Qian[1];Qiao, Lesheng[1];Fang, Zebo[3]

机构：[1]Anhui Univ, Sch Phys & Mat Sci, Radiat Detect Mat & Devices Lab, Hefei 230039, Peoples R China;[2]Anhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Peoples R China;[3]Shaoxing Univ, Sch Math Informat, Shaoxing 312000, Peoples R China

年份：2021

卷号：3

期号：2

起止页码：872

外文期刊名：ACS APPLIED ELECTRONIC MATERIALS

收录：SCI-EXPANDED(收录号：WOS:000623048300036)、、WOS

基金：The authors acknowledge the support from the National Natural Science Foundation of China (11774001, 51872186), Open Fund for Discipline Construction, Institute of Physical Science and Information Technology, Anhui University (S01003101), the Doctoral Research Funding of Anhui University and the Provincial Natural Science Research Program of Higher Education Institutions of Anhui Province KJ2018A0026, and Natural Science Research Project of Colleges and Universities in Anhui Province (KJ2018ZD060).

语种：英文

外文关键词：GaSb; high-k dielectrics; atomic layer deposition; conduction mechanisms; passivation layer

外文摘要：In this report, the impact of atomic-layer-deposition-derived different laminated gate stacks on the interface chemistry and electrical performance of Yb2O3/GaSb metal-oxide-semiconductor (MOS) capacitors has been investigated comparatively. Xray photoelectron spectroscopy measurements and electrical characterization have revealed the existence of less native oxides and elemental Sb at the Yb2O3/Al2O3/GaSb interface, as well as the optimized frequency dispersion and the minimum leakage current density of 2.25 x 10(-7) A/cm(2). Meanwhile, conductance-voltage analyses are carried out to determinate the distribution of interface-state density (D-it) in the entire GaSb band gap. It has been found that an ultrathin Al2O3 layer prior to Yb2O3 deposition can effectively delay the generation of the interface state, and the lowest IA, value of 8.7 x 10(12) cm(-2) eV(-1) for the Al/Yb2O3/Al2O3/GaSb capacitor has been achieved. The possible carrier conduction mechanisms for GaSbbased MOS capacitors with different laminated structures measured at room temperatures and low temperatures have also been systematically analyzed. All the results have indicated that the Yb2O3/Al2O3/GaSb gate stack is a promising candidate for future GaSb-based metaloxide-semiconductor field-effect transistor devices.