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Electrically tunable topological state in [111] perovskite materials with an antiferromagnetic exchange field  ( SCI-EXPANDED收录 EI收录)   被引量:58

文献类型:期刊文献

英文题名:Electrically tunable topological state in [111] perovskite materials with an antiferromagnetic exchange field

作者:Liang, Qi-Feng[1,2];Wu, Long-Hua[1];Hu, Xiao[1]

机构:[1]Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki 3050044, Japan;[2]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China

年份:2013

卷号:15

外文期刊名:NEW JOURNAL OF PHYSICS

收录:SCI-EXPANDED(收录号:WOS:000320698800002)、、EI(收录号:20132916501908)、Scopus(收录号:2-s2.0-84879948777)、WOS

基金:XH is grateful to Masashi Tachiki and Seiji Miyashita for helpful discussions. This work was supported by WPI Initiative on Materials Nanoarchitectonics, MEXT of Japan and Grants-in-Aid for Scientific Research (numbers 22540377 and 25400385), JSPS, Innovative Area 'Topological Quantum Phenomena' (number 25103723), MEXT of Japan, and partially by CREST, JST. QFL was also supported by NSFC under grant number 10904092.

语种:英文

外文关键词:Antiferromagnetism - Calculations - Degrees of freedom (mechanics) - Electric fields - Electric potential - Honeycomb structures - Perovskite - Quantum theory - Sampling - Spin orbit coupling - Spin polarization - Topology

外文摘要:We propose a scheme of band engineering by means of staggered electric potential, antiferromagnetic exchange field and intrinsic spin-orbit coupling for electrons on a honeycomb lattice. With fine control on the degrees of freedom of spin, sublattice and valley, one can achieve a topological state with simultaneous non-zero charge and spin Chern numbers. With first principles calculations, we confirm that the scheme can be realized by material modification in perovskite G-type antiferromagnetic insulators grown along the [111] direction, where Dirac electrons from d orbits are achieved on an atomic sheet of a buckled honeycomb lattice. In a finite sample, this state provides a spin-polarized quantum edge current, robust to both non-magnetic and magnetic defects, with the spin polarization reversible by electric field, and is thus ideal for spintronics applications.

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