文献类型：期刊文献

英文题名：Enhanced thermopower of gated silicene

作者：Yan, Yonghong[1];Wu, Haifei[1];Jiang, Feng[2];Zhao, Hui[3,4]

机构：[1]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China;[2]Shanghai Univ Elect Power, Dept Math & Phys, Shanghai 200090, Peoples R China;[3]Tongji Univ, Minist Educ, Key Lab Adv Microstruct Mat, Shanghai 200092, Peoples R China;[4]Tongji Univ, Dept Phys, Shanghai 200092, Peoples R China

年份：2013

卷号：86

期号：11

外文期刊名：EUROPEAN PHYSICAL JOURNAL B

收录：SCI-EXPANDED(收录号：WOS:000326722600004)、、EI(收录号：20134917046478)、Scopus(收录号：2-s2.0-84888311606)、WOS

基金：The work was supported by NSFC, the Qianjiang Talent Project (Grant No. 2012R10074), and the Zhejiang Provincial Natural Science Foundation of China (Grant No. LQ12F04001).

语种：英文

外文关键词：Electric fields - Energy gap - Silicene

外文摘要：We theoretically investigate the thermopower of silicene systems in an external electric field perpendicular to the silicene sheet. In the absence of the field, we estimate that the thermopower of pure silicene is of order similar to 80 mu V/K. When a finite field is applied, a comparatively big band gap is opened and the thermopower is thus enhanced by several times as compared with the case without the field. The effect of disorder is also studied, and we find only minimal difference.