文献类型：期刊文献

英文题名：Interface Optimization of Passivated Er2O3/Al2O3/InP MOS Capacitors and Modulation of Leakage Current Conduction Mechanism

作者：Qiao, Lesheng[1];He, Gang[1];Hao, Lin[1];Lu, Jinyu[1];Gao, Qian[1];Zhang, Miao[1];Fang, Zebo[2]

机构：[1]Anhui Univ, Sch Phys & Mat Sci, Hefei 230601, Peoples R China;[2]Shaoxing Univ, Sch Math Informat, Shaoxing 312000, Peoples R China

年份：2021

卷号：68

期号：6

起止页码：2899

外文期刊名：IEEE TRANSACTIONS ON ELECTRON DEVICES

收录：SCI-EXPANDED(收录号：WOS:000652799800048)、、WOS

基金：This work was supported in part by the National Natural Science Foundation of China under Grant 11774001 and Grant 51872186 and in part by the Open Fund for Discipline Construction, Institute of Physical Science and Information Technology, Anhui University, under Grant S01003101.

语种：英文

外文关键词：Al2O3 passivation layer; Er2O3 gate dielectrics; indium phosphide (InP); interface reaction; interface state density

外文摘要：The effect of atomic-layer-deposition (ALD)-derived Al2O3 passivation layer on the interface quality of Er2O3/Al2O3/InP laminated stacks and the improvement of electrical performance has been investigated systematically. The chemical bonding states measured by high-resolution X-ray photoelectron spectroscopy (XPS) reveal that the ALD-derived Al2O3 passivation layer can effectively inhibit the diffusion of substrate elements to optimize the interface quality. Electrical characterizations show that the optimized sample has demonstrated improved electrical properties, including the large dielectric constant of 20 and the suppressed leakage current density of 4.10 x 10(-7) cm(2). In addition, the leakage current conduction mechanisms are also investigated as a function of thickness of Al2O3 passivation layer. The optimized interface state density extracted from the conductance method has reduced from 1.30 x 10(12) eV(-1)cm(2) of Er2O3/InP to 7.27 x 10(11) eV(-1)cm(2) of Er2O3/Al2O3/InP by adjusting the passivation layer thickness. As a result, it can be also confirmed that the passivation treatment is beneficial to inhibit the element's diffusion and optimize the interface quality, significantly controlling the capacitor degradation caused by the leakage current through the stacked oxide layer.