文献类型：期刊文献

英文题名：Impact of Graphene Work Function on the Electronic Structures at the Interface between Graphene and Organic Molecules

作者：Wang, Haitao[1];Yang, Xiangdong[1];Dou, Weidong[2];Wang, Peng[3];Ye, Quanlin[1];Yang, Xuxin[1];Li, Baoxing[1];Mao, Hongying[1]

机构：[1]Hangzhou Normal Univ, Dept Phys, Hangzhou 311121, Zhejiang, Peoples R China;[2]Shaoxing Univ, Phys Dept, Lab Low Dimens Carbon Mat, Shaoxing 312000, Peoples R China;[3]Shandong Univ Sci & Technol, Coll Elect & Informat Engn, Dept Appl Phys, Qingdao 266590, Shandong, Peoples R China

年份：2019

卷号：9

期号：8

外文期刊名：NANOMATERIALS

收录：SCI-EXPANDED(收录号：WOS:000483604500073)、、Scopus(收录号：2-s2.0-85071172390)、WOS

基金：This research was funded by the National Natural Science Foundation of China (Grant No. 61401136, 11504207), the Natural Science Foundation of Zhejiang Province (Grant No. LY18F010019, LY17A040009, LY19F040005), and the Innovation Project in Hangzhou for Returned Scholar.

语种：英文

外文关键词：graphene; self-assembled monolayers; work function; band bending

外文摘要：The impact of graphene work function (WF) on the electronic structure at the graphene/organic interface has been investigated. WF manipulation of graphene is realized using self-assembled monolayers (SAMs) with different end groups. With this method, the upper surface of the functionalized graphene remains intact, and thus precludes changes of molecular orientation and packing structures of subsequently deposited active materials. The WF of NH2-SAM functionalized graphene is similar to 3.90 eV. On the other hand, the WF of graphene increases to similar to 5.38 eV on F-SAM. By tuning the WF of graphene, an upward band bending is found at the ZnPc/graphene interface on F-SAM. At the interface between C-60 and NH2-SAM modified graphene, a downward band bending is observed.