文献类型：期刊文献

英文题名：Ferromagnetism in Eu-doped ZnO films deposited by radio-frequency magnetic sputtering

作者：Yong-Sheng, Tan[1,2]; Ze-Bo, Fang[2]; Wei, Chen[2]; Pi-Mo, He[1]

机构：[1] Department of Physics, Zhejiang University, Hangzhou 310027, China; [2] Department of Physics, Shaoxing University, Shaoxing 312000, China

年份：2010

卷号：19

期号：9

外文期刊名：Chinese Physics B

收录：EI(收录号：20104813435514)、Scopus(收录号：2-s2.0-78649341038)

语种：英文

外文关键词：Annealing - Europium compounds - II-VI semiconductors - Metallic films - Oxide minerals - Quantum interference devices - Radio waves - Sputtering - SQUIDs - Zinc metallography - Zinc oxide

外文摘要：This paper reports that Eu-doped ZnO films were successfully deposited on silicon (100) by radio-frequency magnetic sputtering. The x-ray diffraction patterns indicate that Eu substitutes for Zn in the lattice. Ferromagnetic loops were obtained by using superconducting quantum interference device at 10 K and room temperature. No discontinuous change was found in both of the zero-field-cooled and field-cooled curves. The observed ferromagnetism in Eu-doped ZnO can be attributed to a single magnetic phase. The saturation magnetisation decreased remarkably for the Eu-doped ZnO prepared by introducing 5% of oxygen in the sputtering gas or by the post annealing in O2, suggesting that the defects play key roles in the development of ferromagnetism in Eu-doped ZnO films. ? 2010 Chinese Physical Society and IOP Publishing Ltd.