文献类型：期刊文献

英文题名：Transparent conductive Tb-doped ZnO films prepared by rf reactive magnetron sputtering

作者：Fang, Z.B.[1,2]; Tan, Y.S.[1]; Gong, H.X.[2]; Zhen, C.M.[3]; He, Z.W.[1]; Wang, Y.Y.[1]

机构：[1]Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China;[2]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China;[3]Hebei Normal Univ, Inst Phys, Shijiazhuang 050016, Peoples R China

年份：2005

卷号：59

期号：21

起止页码：2611

外文期刊名：MATERIALS LETTERS

收录：SCI-EXPANDED(收录号：WOS:000230338900001)、、EI(收录号：2005269187202)、Scopus(收录号：2-s2.0-20744438163)、WOS

基金：This work was supported by the Natural Science Foundation of China (Grant No. 50272027) and Research Foundation of Shaoxing City Government (2003141).

语种：英文

外文关键词：Tb-doped ZnO films; semiconductors; RF reactive sputtering; transparent conducting oxide

外文摘要：Terbium-doped Zinc oxide (ZnO:Tb) films were prepared by rf reactive magnetron sputtering using a Zn target with some Tb-chips attached. The structural, electrical, and optical properties of the films were investigated by X-ray diffraction (XRD), Hall measurement and optical spectroscopy, respectively. The resistivity of 9.34 x 10(-4) Omega cm was obtained in ZnO: Tb films prepared on a Si substrate at a temperature of 250 degrees C with a Tb content of 4.1%. The transparent edges of the films showed blue-shifts with the average transmittance within the visible range being up to 85%. The results to date demonstrate that Tb-doped ZnO films are high-quality transparent conductive oxide materials. (c) 2005 Elsevier B.V. All rights reserved.