文献类型：期刊文献

英文题名：Shubnikov-de Haas oscillations and nontrivial topological states in Weyl semimetal candidate SmAlSi

作者：Xu, Longmeng[1,2];Niu, Haoyu[1,2];Bai, Yuming[1,2];Zhu, Haipeng[1,2];Yuan, Songliu[2];He, Xiong[1];Han, Yibo[1,2];Zhao, Lingxiao[1,2];Yang, Yang[3];Xia, Zhengcai[1,2];Liang, Qifeng[4];Tian, Zhaoming[1,2,5]

机构：[1]Huazhong Univ Sci & Technol, Wuhan Natl High Magnet Field Ctr, Wuhan 430074, Peoples R China;[2]Huazhong Univ Sci & Technol, Sch Phys, Wuhan 430074, Peoples R China;[3]Zhengzhou Univ Light Ind, Sch Phys & Elect Engn, Zhengzhou 450002, Peoples R China;[4]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China;[5]Shenzhen Huazhong Univ Sci & Technol Res Inst, Shenzhen 518057, Guangdong, Peoples R China

年份：2022

卷号：34

期号：48

外文期刊名：JOURNAL OF PHYSICS-CONDENSED MATTER

收录：SCI-EXPANDED(收录号：WOS:000869457900001)、、EI(收录号：20224513067660)、Scopus(收录号：2-s2.0-85140273207)、WOS

基金：We acknowledge financial support from the National Natural Science Foundation of China (Grant Nos. 11874158 and 12004123) and the Fundamental Research Funds of Guangdong Province (Grant No. 2022A1515010658). We would like to thank the staff of the analysis center of Huazhong University of Science and Technology for their assistance in structural characterizations.

语种：英文

外文关键词：topological semimetal; electrical transport; Shubnikov-de Haas oscillations; Berry phase; Hall effect

外文摘要：The RAlX (R = Light rare earth; X = Ge, Si) compounds, as a family of magnetic Weyl semimetal, have recently attracted growing attention due to the tunability of Weyl nodes and its interactions with diverse magnetism by rare-earth atoms. Here, we report the magnetotransport evidence and electronic structure calculations on nontrivial band topology of SmAlSi, a new member of this family. At low temperatures, SmAlSi exhibits large non-saturated magnetoresistance (MR) (as large as similar to 5500% at 2 K and 48 T) and distinct Shubnikov-de Haas (SdH) oscillations. The field dependent MRs at 2 K deviate from the semiclassical (mu H-0)(2) variation but follow the power-law relation MR proportional to (mu H-0)(m) with a crossover from m similar to 1.52 at low fields (mu H-0 < 15 T) to m similar to 1 under high fields (mu H-0 > 18 T), which is attributed to the existence of Weyl points and electron-hole compensated characteristics with high mobility. From the analysis of SdH oscillations, two fundamental frequencies originating from the Fermi surface pockets with non-trivial pi Berry phases and small cyclotron mass can be identified, this feature is supported by the calculated electronic band structures with two Weyl pockets near the Fermi level. Our study establishes SmAlSi as a paradigm for researching the novel topological states of RAlX family.