文献类型：期刊文献

中文题名：溅射法制备TiO2薄膜过程中靶中毒现象的消除及样品表征

英文题名：Elimination of Target Poisoning in the Process of TiO2 Thin Films Prepared by Sputtering and Characterization of Films

作者：王秩伟[1,2];龚恒翔[2];李雪[2];谌家军[1]

机构：[1]西华师范大学物理与电子信息学院,四川南充637002;[2]绍兴文理学院材料物理与设备研究所,浙江绍兴312000

年份：2007

卷号：4

期号：6

起止页码：50

中文期刊名：纳米科技

基金：绍兴市科技局项目（No.2003141;No.2004147）

语种：中文

中文关键词：TiO2;薄膜;靶中毒;晶体结构;表面形貌

外文关键词：TiO2 thin films; target poisoning; crystal structure; surface morphology

中文摘要：用氧脉冲直流反应磁控溅射法，在载玻片衬底上制备了不同初始氧浓度和不同断氧时间％的多晶TiO2纳米薄膜，并对薄膜的厚度、晶体结构及表面形貌进行了研究。研究发现，脉冲式通氧能有效消除靶中毒，将薄膜沉积速率最大提高到3～5nm／min，并且当断氧时间大于30s时，沉积速率在2．5nm／min以上；薄膜的晶体结构和形貌随着氧浓度和断氧时间而变化，在初始氧浓度为30％、断氧时间为30s时，金红石结构样品具有最佳结晶程度，并且薄膜的表面平整、晶粒尺寸分布均匀，而锐钛矿结构的最佳结晶条件是氧浓度30％或50％、断氧时间20s.

外文摘要：Polycrystalline TiO2 thin films were deposited on slide glass at different oxygen concentration and time of oxygen-off （Toff） by oxygen pulse DC reactive magnetron sputtering in this paper. And the thickness of films, crystal structure and surface morphology were investigated. It was found that oxygen introduced like pulse can increase the deposition rate up to the maximum value of 3-Snm/min, and the rate was more than 2.Snm/min with the Toff large than 30s. In addition, the influence of oxygen concentration and Toff on crystal structure and surface morphology was studied. The best crystallization condition of ruffle is at oxygen concentration of 30% and Toff of 30s, and this film also has smooth surface and uniform grain size. However, the best crystallization condition of anatase ia at oxygen concentration of 30% or 50%, and Toff of 20s.