文献类型：期刊文献

英文题名：Band offsets in HfTiO/InGaZnO4 heterojunction determined by X-ray photoelectron spectroscopy

作者：He, G.[1];Chen, X. F.[1];Lv, J. G.[2];Fang, Z. B.[3];Liu, Y. M.[1];Zhu, K. R.[1];Sun, Z. Q.[1];Liu, M.[4]

机构：[1]Anhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R China;[2]Hefei Normal Univ, Sch Elect & Informat Engn, Hefei 230601, Peoples R China;[3]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China;[4]Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Anhui Key Lab Nanomat & Nanostruct, Hefei 230031, Peoples R China

年份：2015

卷号：642

起止页码：172

外文期刊名：JOURNAL OF ALLOYS AND COMPOUNDS

收录：SCI-EXPANDED(收录号：WOS:000354577300026)、、WOS

基金：The authors acknowledge the support from National Key Project of Fundamental Research (2013CB632705), National Natural Science Foundation of China (11104269), Provincial Natural Science Foundation of Anhui Higher Education Institution of China (KJ2012A023), Key Project of Chinese Ministry of Education (212082), Outstanding Young Scientific Foundation and Youth Science Research Foundation of Anhui University (KJJQ1103), and ''211 project'' of Anhui University.

语种：英文

外文关键词：Band offset; HfTiO/InGaZnO4 heterojunction; X-ray photoelectron spectroscopy; Thin film transistors

外文摘要：In current report, X-ray photoelectron spectroscopy has been pursued to obtain the valence band discontinuity (Delta E-v) of sputter deposited HfTiO/InZnGaO4 (IGZO) heterostructures. A DEv value of 0.32 +/- 0.1 eV was obtained by using the Ga 2p3/2, Zn 2p3/2, and In 3d5/2 energy levels as references. Taking into consideration the experimental band gaps of 5.35 eV and 3.39 eV for HfTiO and IGZO thin films measured by absorption method, respectively, this would result in a conduction band offset of 1.64 eV in this heterostructure. (C) 2015 Elsevier B.V. All rights reserved.