文献类型：期刊文献

英文题名：Interface Optimization and Modulation of Leakage Current Conduction Mechanism of Yb2O3/GaSb MOS Capacitors With (NH4)(2)S Solutions Passivation

作者：Hao, Lin[1];He, Gang[1];Qiao, Lesheng[1];Fang, Zebo[2];Yao, Bo[2]

机构：[1]Anhui Univ, Sch Phys & Mat Sci, Radiat Detect Mat & Devices Lab, Hefei 230601, Peoples R China;[2]Shaoxing Univ, Sch Math Informat, Shaoxing 312000, Peoples R China

年份：2021

卷号：42

期号：2

起止页码：140

外文期刊名：IEEE ELECTRON DEVICE LETTERS

收录：SCI-EXPANDED(收录号：WOS:000613404400002)、、WOS

基金：This work was supported in part by the National Natural Science Foundation of China under Grant 11774001 and Grant 51872186, in part by the Open Fund for Discipline Construction, Institute of Physical Science and Information Technology, Anhui University under Grant S01003101, and in part by the Zhejiang Province Public Welfare Technology Application Research Project under Grant LGG21F050001.

语种：英文

外文关键词：III-V semiconductor; GaSb MOS capacitor; sulfur passivation; leakage conduction

外文摘要：In current work, the impact of ammonium sulfide (NH4)(2)S solution passivationwith varied pH value on the Yb2O3/n-GaSb interface has been investigated comparatively. Compared with control samples, the neutral (NH4)(2)S solution passivation can effectively reduce oxides layer on GaSb surface and gate leakage via X-ray photoelectron spectroscopy(XPS) measurements and electricalcharacterization. High-low frequency capacitance method was used to evaluate interface-state density Dit, it was found that cappingwith Yb2O3 can delay the interface-stategeneration and the lowest Dit value of 5.18 x 10(12) cm(-2) eV(-1) for Yb2O3/GaSb capacitor with neutral (NH4)(2)S was achieved. Moreover, the possible leakage current conduction mechanisms for capacitors measured at room temperature and low temperature have also been discussed systematically.