文献类型：会议论文

中文题名：The Elimination of Target Poisoning in the Process of TiO2 Thin Films Prepared by Sputtering and the Characterization of Films

作者：王秩伟;龚恒翔;李雪

机构：[1]西华师范大学物理与电子信息学院,637002,南充;[2]绍兴文理学院材料物理与设备研究所,312000,绍兴;

会议论文集：第六届中国国际纳米科技研讨会论文集

会议日期：20071119

会议地点：成都

主办单位：中国微米纳米技术学会

语种：中文

中文关键词：TiO2 thin films;target poisoning;crystal structure;surface morphology

中文摘要：Target poisoning is an important issue in reactive sputtering. Polycrystalline TiO2 thin films were deposited on slide glass at different oxygen concentration and time of oxygen-off (Toff) by oxygen pulse DC reactive magnetron sputtering in this paper. And the thickness of films, crystal structure and surface morphology were investigated. It was found that oxygen introduced like pulse can increase the deposition rate up to the maximum value of 3-5nm/min, and the rate was more than 2.5nm/min with the Toff large than 30s. In addition, the influence of oxygen concentration and Toff on crystal structure and surface morphology was studied by XRD and FE-SEM. It is easy to form rutile when deposited at low oxygen concentration and large Toff. The best crystallization condition of rutile is at oxygen concentration of 30％ and Toff of 30s, and this film also has smooth surface and uniform grain size. However, the best crystallization condition of anatase ia at oxygen concentration of 30％ or 50％, and Toff of 20s.