文献类型：期刊文献

英文题名：Operational dynamics and architecture dependence of double-gate OFETs with balanced top and bottom channel characteristics

作者：Luo, Xiao[1];Du, Lili[1];Yao, Bo[1,2];Lv, Wenli[1];Sun, Lei[1];Li, Yao[1];Wu, Zongyong[1];Wen, Zhanwei[1];Peng, Yingquan[1,3]

机构：[1]Lanzhou Univ, Inst Microelect, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China;[2]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China;[3]Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China

年份：2015

卷号：3

期号：28

起止页码：7336

外文期刊名：JOURNAL OF MATERIALS CHEMISTRY C

收录：SCI-EXPANDED(收录号：WOS:000357805300012)、、EI(收录号：20153201111242)、Scopus(收录号：2-s2.0-84938535634)、WOS

基金：This work was supported by the National Natural Science Foundation of China Grant No. 10974074 and the Research Fund for the Doctoral Program of Higher Education of China Grant No. 20110211110005.

语种：英文

外文关键词：Architecture - Fluorine compounds - Gate dielectrics - Lithium Fluoride - Organic field effect transistors - Threshold voltage

外文摘要：A double-gate organic field-effect transistor (DGOFET) utilizing thermally evaporated lithium fluoride (LiF) as the top gate dielectric and fluorinated copper-phthalocyanine (F16CuPc) as the active channel material was reported in this article. XRD and AFM analyses manifested that the fabricated LiF films on the F16CuPc channel layer were highly dense polycrystalline, uniform, and flat. A comprehensive and systemic study of operational dynamics and architecture dependence of DGOFETs was reported herein. Three different operating modes of DGOFETs were introduced and demonstrated, which indicated that controllable device performances (considering output current, threshold voltage, etc.) could be obtained by double-gate architecture, and DGOFETs working in the synchronized mode exhibited high field-effect mobility, low threshold voltage (absolute value), and large transconductance. Furthermore, the DGOFET based F16CuPc showed a better gate modulation effect, which could achieve a switch from normally-on to off-state in double-gate mode. The successful operation of the fabricated DGOFETs also indicated that LiF is a promising material as the dielectric for realizing high-performance and patterned top-gate OFETs.