文献类型：期刊文献

英文题名：Band offsets of La2O3 films on Ge substrates grown by radio frequency magnetron sputtering

作者：Liu, Qiya[1,2];Fang, Zebo[1];Liu, Shiyan[1];Tan, Yongsheng[1];Chen, Jiajun[2]

机构：[1]Shaoxing Univ, Dept Phys, Shaoxing 312000, Zhejiang, Peoples R China;[2]China West Normal Univ, Coll Phys & Elect Informat, Nanchong 637002, Sichuan, Peoples R China

年份：2014

卷号：116

起止页码：43

外文期刊名：MATERIALS LETTERS

收录：SCI-EXPANDED(收录号：WOS:000331025500012)、、WOS

基金：This work was supported by National Natural Science Foundation of China (Grant No. 60806031, 51272159), by the Natural Science Foundation of Zhejiang province, China (Grant No. Y6100596, LQ13A040004).

语种：英文

外文关键词：High-k; Dielectric; La2O3; Ge; XPS

外文摘要：La2O3 films were grown on Ge substrates by radio frequency magnetron sputtering technique. The band alignment of the La2O3/Ge heterojunction was analyzed by X-ray photoelectron spectroscopy. The valence-band and the conduction-band offsets of La2O3 to Ge are found to be -2.76 +/- 0.1 eV and 1.75 +/- 0.3 eV, respectively. Based on 0 Is energy loss spectrum analysis, it can be noted that the energy gap of La2O3 is 5.18 +/- 0.2 eV. According to the suitable band offset and large band gap, it can be concluded that 12203 could be a promising candidate to act as high-k gate dielectrics. (C) 2013 Elsevier B.V. All rights reserved.