文献类型：期刊文献

英文题名：Influence of Local Heterojunction on the Thermoelectric Properties of Mo-SnSe Multilayer Films Deposited by Magnetron Sputtering

作者：Chen, Zi Jie[1];Shen, Tong[1];Nutor, Raymond Kwesi[1];Yang, Shi Dan[1];Wu, Hai Fei[2];Si, Jian Xiao[1]

机构：[1]Zhejiang Normal Univ, Dept Phys, Jinhua 321004, Peoples R China;[2]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China

年份：2019

卷号：48

期号：2

起止页码：1153

外文期刊名：JOURNAL OF ELECTRONIC MATERIALS

收录：SCI-EXPANDED(收录号：WOS:000455263100049)、、EI(收录号：20185106255929)、Scopus(收录号：2-s2.0-85058390492)、WOS

基金：This work was sponsored by the National Natural Science Foundation of China (Grant Nos. 51302248 and 51202149) and Zhejiang Provincial Natural Science Foundation of China (Grant No. Y1110563). We thank Prof. Jianzhong Jiang and Yunzhang Fang for their useful discussions.

语种：英文

外文关键词：SnSe films; thermoelectric properties; sputtering; heterojunction

外文摘要：Mo-SnSe multilayer films were deposited by multi-step magnetron sputtering. The Mo-SnSe multilayer films are then annealed, and the new phases including SnSe2 and MoSe2 are observed by x-ray diffraction and Raman spectroscopy. Scanning electron microscopy reveals that the SnSe exhibits the columnar grain structure with sizes from 50-100nm. The high-resolution transmission electron microscopy shows the SnSe2 is dispersed at the boundary of the columnar grain and the local MoSe2/SnSe heterojunction is formed in the interior of the columnar grain. The influence of Mo content on the thermoelectric properties of SnSe thin films was investigated. A maximum power factor of 0.44Wcm(-1)K(-2) was obtained for a 2.6at.% Mo-doped SnSe thin film at 576K, which is higher than that of a SnSe thin film deposited under the same conditions.