文献类型：期刊文献

英文题名：Modulating the Cathode by Back-Gate for Planar Nanoscale Vacuum/Air Channel Electron Tube

作者：Wang, Yuelin[1];Ying, Wenjing[2];Li, Tie[2];Fang, Zebo[1];Ye, Qiufeng[1]

机构：[1]Shaoxing Univ, Zhejiang Engn Res Ctr MEMS, Dept Phys, Shaoxing 312000, Peoples R China;[2]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

年份：2024

外文期刊名：IEEE TRANSACTIONS ON ELECTRON DEVICES

收录：SCI-EXPANDED(收录号：WOS:001329038400001)、、EI(收录号：20244117175068)、Scopus(收录号：2-s2.0-85205924159)、WOS

基金：This work was supported by Smart Sensor Innovation Team Program of Shaoxing University.

语种：英文

外文关键词：Cathodes; Logic gates; Silicon; Electrons; Anodes; Etching; Nanoscale devices; Voltage control; Electron tubes; Voltage measurement; Cathode modulated; electron density; field emission; planar electron tube

外文摘要：Nanoscale vacuum/air channel electron tubes (VETs) keep emerging owing to their superior performance in high-temperature and high-frequency working environments. However, in VETs the edge field of the gate with inferior modulation efficiency, nonnegligible leakage or accumulation, and poor compatibility with integrated circuits (ICs) technology limits the realization of VET IC. In this work, an original cathode-modulated VET (CMVET) is proposed, which can efficiently control the field emission current of the cathode by directly regulating the electron density of the cathode by back-gate, resulting in regulating the anode current. As a result, we obtain a transconductance of 4.6 mu S and a suppressed gate leakage current of no more than 10(-11) A for the CMVET device, which is completely fabricated by traditional microelectronic process, being compatible with IC processes. On the basis of this strategy, it is promising to realize the CMVET IC with great resistance to high frequency, high temperature, and high radiation.