文献类型：期刊文献

英文题名：Analysis of the electrical properties and current transportation mechanism of a metal oxide semiconductor (MOS) capacitor based on HfGdO gate dielectrics

作者：Jiang, S. S.[1];He, G.[1];Fang, Z. B.[2];Wang, P. H.[1];Liu, Y. M.[1];Lv, J. G.[3];Liu, M.[4]

机构：[1]Anhui Univ, Sch Phys & Mat Sci, Radiat Detect Mat & Devices Lab, Hefei 230601, Anhui, Peoples R China;[2]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China;[3]Hefei Normal Univ, Dept Phys & Elect Engn, Hefei 230061, Anhui, Peoples R China;[4]Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Anhui Key Lab Nanomat & Nanostruct, Hefei 230031, Anhui, Peoples R China

年份：2018

卷号：757

起止页码：288

外文期刊名：JOURNAL OF ALLOYS AND COMPOUNDS

收录：SCI-EXPANDED(收录号：WOS:000433609100036)、、EI(收录号：20182105219683)、Scopus(收录号：2-s2.0-85047098280)、WOS

基金：authors acknowledge the support from the National Natural Science Foundation of China (51572002,11774001,11474284), the Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China (J05015131), Anhui Provincial Natural Science Foundation (1608085MA06).

语种：英文

外文关键词：High-k gate dielectrics; HfGdO; Electrical properties; Metal oxide semiconductor (MOS) transistors; Leakage current density

外文摘要：The microstructure, optical and electrical properties of sputtering-derived HfGdO high-k gate dielectric thin films as a function of the Gd doping content have been systematically investigated. X-ray diffraction (XRD) measurements have indicated that Gd doping can form a new stable cubic phase. The optical band gap of the HfGdO gate dielectrics increases gradually from 5.82 to 6.14 eV as the Gd doping concentration increases. The electrical properties, such as permittivity, oxide trapped charge density, border trap charge density and leakage current density of samples, are determined using a semiconductor device analyzer. The formation mechanism of leakage current is also discussed in detail. In addition, the interfacial properties of HfGdO/Si gate satcks were tested to establish the electrical properties. The excellent optoelectronic properties, such as the optical band gap of 5.95 eV, leakage current density of 8.33 x 10(-8) A/cm(2) at a bias voltage of 2 V, oxide trapped charge density of -1.06 x 10(12) cm(-2) and a border trap charge density of zero and optimized interfacial properties were observed in the HfGdO thin films with sputtering power of 30 W, indicating that it may become a potential high-k gate dielectric in future complementary metal oxide semiconductor (CMOS) devices. (C) 2018 Elsevier B.V. All rights reserved.