文献类型：期刊文献

英文题名：Enhanced Thermoelectric Performance of n-Type Polycrystalline SnSe via MoCl5 Doping

作者：Shen, Tong[1]; Li, Kang Yin[1]; Chen, Zi Jie[1]; Wu, Hai Fei[2]; Si, Jian Xiao[1]

机构：[1] Department of Physics, Zhejiang Normal University, Jinhua, 321004, China; [2] Department of Physics, Shaoxing University, Shaoxing, 312000, China

年份：2020

卷号：49

期号：1

起止页码：621

外文期刊名：Journal of Electronic Materials

收录：EI(收录号：20194707708332)、Scopus(收录号：2-s2.0-85075077988)

语种：英文

外文关键词：Defects - Tin compounds - Selenium compounds - Thermoelectricity - Carrier concentration - Hot pressing - Layered semiconductors

外文摘要：n-Type polycrystalline SnSe0.95-x%MoCl5 (x = 0.5, 1.0, 1.5, 2) samples have been synthesized by melting and hot-pressing. The effect of MoCl5 doping on thermoelectric properties is investigated. The multipoint defects of Clse and Mosn increased the carrier concentration from 5.3 × 1017?cm?3 (p-type) in undoped SnSe to 1.76 × 1019?cm?3 (n-type) in SnSe0.95-1.5%MoCl5 sample, which leads to increased electrical conductivity. Moreover, the multipoint defects enhanced the phonon scattering and resulted in a suppression of the thermal conductivity. As a result, a peak value ZT of 0.66 was obtained at 773?K for SnSe0.95-1%MoCl5. These results show that MoCl5 could be an effective dopant for improving the thermoelectric performance of n-type SnSe. ? 2019, The Minerals, Metals & Materials Society.