文献类型：期刊文献

英文题名：Substrate effect on phonon in graphene layers

作者：Guo, Xiao[1];Wang, Yongsong[1];You, Siwen[1];Yang, Dingbang[1];Jia, Guiping[1];Song, Fei[2];Dou, Weidong[3];Huang, Han[1]

机构：[1]Cent South Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Peoples R China;[2]Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201210, Peoples R China;[3]Shaoxing Univ, Phys Dept, Shaoxing 312000, Peoples R China

年份：0

外文期刊名：CARBON LETTERS

收录：SCI-EXPANDED(收录号：WOS:000864043600002)、、EI(收录号：20224413048995)、Scopus(收录号：2-s2.0-85139487775)、WOS

基金：We acknowledge the financial support from the National Natural Science Foundation (NSF) of China (Grants No. 11874427) and from the Fundamental Research Funds for the Central Universities of Central South University (Grants No. 2021zzts0506).

语种：英文

外文关键词：Graphene; Substrate effect; Raman spectroscopy; Phonon mode

外文摘要：Graphene exhibits high carrier mobility and concentration as well as other remarkable properties. Among them, the thermal behaviors of phonon modes play important roles in the application of optical and electronic devices. Here, A-A stacked graphene were proved well by Raman investigation on G and 2D modes. Temperature-dependent Raman scattering measurements on graphene with various number of layers on different substrates were conducted in the temperature range of 80-460 K. The first-order temperature coefficient of single layer graphene (SLG) on SiO2/Si substrate is obviously smaller than that on Cu foil, indicating that the substrate effect attributes a great impact on graphene phonon temperature dependence. The first-order temperature coefficients of multilayer graphene linearly decrease as the number of layers increases, attributed to the reduction of substrate effect in phonon behaviors, rather than to the anharmonic phonon-phonon (ph-ph) coupling or thermal expansion.