文献类型：期刊文献

英文题名：Interface State Density Modification and Dielectric Reliability Enhancement of ErTixOy/Al2O3/InP Laminated Stacks

作者：Qiao, Lesheng[1];He, Gang[1];Lu, Jinyu[1];Wu, Qiuju[2];Yao, Bo[2];Fang, Zebo[2]

机构：[1]Anhui Univ, Sch Mat Sci & Engn, Hefei 230601, Peoples R China;[2]Shaoxing Univ, Sch Math Informat, Shaoxing 312000, Peoples R China

年份：0

外文期刊名：IEEE TRANSACTIONS ON ELECTRON DEVICES

收录：SCI-EXPANDED(收录号：WOS:000943557500001)、、WOS

基金：uary 2023; revised 31 January 2023;accepted 14 February 2023. This work was supported in part by the National Natural Science Foundation of China under Grant 11774001,in part by the Anhui Project under Grant Z010118169, and in part by the Open Fund Project of Zhejiang Engineering Research Center of MEMSin Shaoxing University under Grant MEMSZJERC2202. The review of this article was arranged by Editor P. Thadesar

语种：英文

外文关键词：Indium phosphide; III-V semiconductor materials; Substrates; Leakage currents; Logic gates; Films; Interface states; Dielectric reliability; InP MOS capacitor; interface analysis; leakage current conduction

外文摘要：Co-sputtering-derived ErTixOy gate dielectric films were deposited on atomic layer deposition (ALD)-derived Al2O3-passivated InP substrates. The interface chemistry and electrical properties of ErTixOy/Al2O3/InP MOS capacitors were investigated as a function of Er/Ti X-ray photoelectron spectroscopy (XPS) measurements, and electrical tests have revealed that an atomic ratio of 3.7/5.2 of erbium to titanium can effectively modulate the interface chemistry and obtain optimized electrical prop-erties, achieving a large dielectric constant of 26.4, a low density of leakage current of 1.8 x 10(-5) A/cm(2), and an enhanced breakdown properties (V-BD = 6.1 V and t(BD) = 4950 s on Si). Furthermore, the density of interface states (D-it) has been evaluated based on the conductance method, and leakage current mechanisms are investigated in the temperature range of 77-377 K. Current results have indi-cated that ErTixOy is a ternary oxide gate dielectric with superior performance, which is of great significance for the development and exploration of new gate dielectrics for CMOS devices.