文献类型：期刊文献

英文题名：Influence of post-annealing treatment on the structure properties of ZnO films

作者：Fang, Z.B.[1,2]; Yan, Z.J.[1]; Tan, Y.S.[1]; Liu, X.Q.[1]; Wang, Y.Y.[1]

机构：[1]Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China;[2]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China

年份：2005

卷号：241

期号：3-4

起止页码：303

外文期刊名：APPLIED SURFACE SCIENCE

收录：SCI-EXPANDED(收录号：WOS:000227536800005)、、EI(收录号：2005038796434)、Scopus(收录号：2-s2.0-11444257247)、WOS

基金：This work was supported by the National Natural Science Foundation of China (Grant No. 50272027) and Natural Science Foundation of Gansu Province, PR China (No. ZS011-050-C).

语种：英文

外文关键词：ZnO films; rf reactive sputtering; annealing; microstructure

外文摘要：Highly oriented polycrystalline ZnO films were deposited on Si substrate by rf reactive sputtering technique. X-ray diffraction (XRD), atomic force microscope (AFM) and the refractive index were employed to analyze the influence of the post-annealing treatment on the structural properties of ZnO thin films. It has been found that the grain size of ZnO thin films increases with increasing the annealing temperature, the shift of the diffraction peak position from its normal powder value was observed. AFM analysis shows that the surface roughness of ZnO films is very low at temperature between 250 and 600degreesC. The packing density investigation shows ZnO films can obtain high packing densities (above 0.973) in the annealing temperature rang from 450 to 600degreesC. (C) 2004 Elsevier B.V. All rights reserved.