文献类型：期刊文献

英文题名：Interface State Density Modification and Dielectric Reliability Enhancement of ErTixOy/Al2O3/InP Laminated Stacks

作者：Qiao, Lesheng[1]; He, Gang[1]; Lu, Jinyu[1]; Wu, Qiuju[2]; Yao, Bo[2]; Fang, Zebo[2]

机构：[1] Anhui University, School of Materials Science and Engineering, Hefei, 230601, China; [2] Shaoxing University, School of Mathematical Information, Shaoxing, 312000, China

年份：2023

卷号：70

期号：4

起止页码：1795

外文期刊名：IEEE Transactions on Electron Devices

收录：EI(收录号：20231013686678)、Scopus(收录号：2-s2.0-85149401824)

语种：英文

外文关键词：Atomic layer deposition - Dielectric films - Gate dielectrics - III-V semiconductors - Interface states - Interfaces (materials) - Leakage currents - MOS capacitors - Reliability analysis - Semiconducting indium phosphide

外文摘要：Co-sputtering-derived ErTixOy gate dielectric films were deposited on atomic layer deposition (ALD)-derived Al2O3-passivated InP substrates. The interface chemistry and electrical properties of ErTixOy/Al2O3/InP MOS capacitors were investigated as a function of Er/Ti X-ray photoelectron spectroscopy (XPS) measurements, and electrical tests have revealed that an atomic ratio of 3.7/5.2 of erbium to titanium can effectively modulate the interface chemistry and obtain optimized electrical properties, achieving a large dielectric constant of 26.4, a low density of leakage current of 1.8× 10-5 A/cm2, and an enhanced breakdown properties ( VBD =6.1 V and tBD =4950 s on Si). Furthermore, the density of interface states ( Dit) has been evaluated based on the conductance method, and leakage current mechanisms are investigated in the temperature range of 77-377 K. Current results have indicated that ErTixOy is a ternary oxide gate dielectric with superior performance, which is of great significance for the development and exploration of new gate dielectrics for CMOS devices. ? 1963-2012 IEEE.