文献类型：期刊文献

英文题名：Enhanced Thermoelectric Performance of n-Type Polycrystalline SnSe via MoCl5 Doping

作者：Shen, Tong[1];Li, Kang Yin[1];Chen, Zi Jie[1];Wu, Hai Fei[2];Si, Jian Xiao[1]

机构：[1]Zhejiang Normal Univ, Dept Phys, Jinhua 321004, Zhejiang, Peoples R China;[2]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China

年份：2020

卷号：49

期号：1

起止页码：621

外文期刊名：JOURNAL OF ELECTRONIC MATERIALS

收录：SCI-EXPANDED(收录号：WOS:000495945800011)、、WOS

基金：This work was sponsored by the Zhejiang Provincial Natural Science Foundation of China (Grant No. LY19E020009).

语种：英文

外文关键词：Polycrystalline SnSe; n-type; Thermoelectric; MoCl5

外文摘要：n-Type polycrystalline SnSe0.95-x%MoCl5 (x=0.5, 1.0, 1.5, 2) samples have been synthesized by melting and hot-pressing. The effect of MoCl5 doping on thermoelectric properties is investigated. The multipoint defects of Cl-se and Mo-sn increased the carrier concentration from 5.3x10(17) cm(-3) (p-type) in undoped SnSe to 1.76x10(19) cm(-3) (n-type) in SnSe0.95-1.5%MoCl5 sample, which leads to increased electrical conductivity. Moreover, the multipoint defects enhanced the phonon scattering and resulted in a suppression of the thermal conductivity. As a result, a peak value ZT of 0.66 was obtained at 773 K for SnSe0.95-1%MoCl5. These results show that MoCl5 could be an effective dopant for improving the thermoelectric performance of n-type SnSe.