文献类型：期刊文献

英文题名：Enhanced thermoelectric performance of SnSe doped with layered MoS2/graphene

作者：Yang, Shidan[1]; Si, Jianxiao[1]; Su, Qingmei[1]; Wu, Haifei[2]

机构：[1] Department of Physics, Zhejiang Normal University, Jinhua, 321004, China; [2] Department of Physics, Shaoxing University, Shaoxing, 312000, China

年份：2017

卷号：193

起止页码：146

外文期刊名：Materials Letters

收录：EI(收录号：20170603328136)、Scopus(收录号：2-s2.0-85011325664)

语种：英文

外文关键词：Layered semiconductors - Grain boundaries - Hot pressing - Thermoelectricity - Molybdenum compounds - Sintering - Tin compounds

外文摘要：We report the enhancement of thermoelectric properties in p-type SnSe by the addition of layered MoS2/graphene (MoS2/G). Highly oriented SnSe + MoS2/G (x wt%, x = 0, 0.2, 0.4, 0.8, 1.6 and 3.2) composites have been synthesized by rapid induction melting followed by rapid hot pressing. It is found that the addition of MoS2/G can enhance the maximal power factor from ～1.83 μW cm?1 K?2 for pristine SnSe to ～4.68 μW cm?1 K?2 for a SnSe + 3.2 wt% MoS2/G sample. Moreover, the layered MoS2/G also contributes to a low lattice thermal conductivity due to phonons scattering at grain boundaries. A maximum ZT of 0.98 is achieved in the SnSe + 3.2 wt% MoS2/G sample at 810 K. Our results provide a possible strategy to enhance the thermoelectric performance of SnSe. ? 2017 Elsevier B.V.