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Current mechanism and band alignment of Al (Pt)/HfGdO/Ge capacitors    

文献类型:期刊文献

中文题名:Current mechanism and band alignment of Al(Pt)/HfGdO/Ge capacitors

英文题名:Current mechanism and band alignment of Al (Pt)/HfGdO/Ge capacitors

作者:Yuan Junjun[1,2];Fang Zebo[2];Zhu Yanyan[1];Yao Bo[2];Liu Shiyan[2];He Gang[3];Tan Yongsheng[2]

机构:[1]Shanghai Univ Elect Power, Dept Math & Phys, Shanghai 200090, Peoples R China;[2]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China;[3]Anhui Univ, Anhui Key Lab Informat Mat & Devices, Sch Phys & Mat Sci, Hefei 230039, Peoples R China

年份:2016

卷号:0

期号:3

中文期刊名:半导体学报:英文版

外文期刊名:JOURNAL OF SEMICONDUCTORS

收录:CSTPCD、、ESCI(收录号:WOS:000376433000011)、CSCD2015_2016、Scopus(收录号:2-s2.0-84994662867)、WOS、CSCD

基金:Project supported by the Natural Science Foundation of Shanghai (No. 15ZR1418700), the Natural Science Foundation of China (Nos. 51272159, 61405118), and the Natural Science Foundation of Zhejiang (Nos. LY15A040001, LQ13A040004).

语种:英文

中文关键词:电容器;铝带;X射线光电子能谱;电流传输特性;对齐;机制;GE;射频磁控溅射

外文关键词:high-k film; leakage current; charge conduction

中文摘要:HfGdO high-k gate dielectric thin films were deposited on Ge substrates by radio-frequency magnetron sputtering. The current transport properties of Al(Pt)/HfGdO/Ge MOS structures were investigated at room temperature. The results show that the leakage currents are mainly induced by Frenkel-Poole emissions at a low electric field. At a high electric field, Fowler Nordheim tunneling dominates the current. The energy barriers were obtained by analyzing the Fowler Nordheim tunneling characteristics, which are 1.62 eV and 2.77 eV for Al/HfGdO and Pt/HfGdO, respectively. The energy band alignments for metal/HfGdO/Ge capacitors are summarized together with the results of current-voltage and the x-ray photoelectron spectroscopy.

外文摘要:HfGdO high-k gate dielectric thin films were deposited on Ge substrates by radio-frequency magnetron sputtering. The current transport properties of Al(Pt)/HfGdO/Ge MOS structures were investigated at room temperature. The results show that the leakage currents are mainly induced by Frenkel-Poole emissions at a low electric field. At a high electric field, Fowler Nordheim tunneling dominates the current. The energy barriers were obtained by analyzing the Fowler Nordheim tunneling characteristics, which are 1.62 eV and 2.77 eV for Al/HfGdO and Pt/HfGdO, respectively. The energy band alignments for metal/HfGdO/Ge capacitors are summarized together with the results of current-voltage and the x-ray photoelectron spectroscopy.

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