文献类型：期刊文献

英文题名：Structure and electrical characterization of amorphous ErSiO films deposited by rf magnetron sputtering on Si (001)

作者：Fang, Z. B.[1];Zhu, Y. Y.[2];Chen, W.[1]

机构：[1]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China;[2]Shanghai Univ Elect Power, Dept Math & Phys, Shanghai 200090, Peoples R China

年份：2011

卷号：102

期号：3

起止页码：695

外文期刊名：APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

收录：SCI-EXPANDED(收录号：WOS:000287320600027)、、EI(收录号：20112514083495)、Scopus(收录号：2-s2.0-79959354023)、WOS

基金：This work was supported by the National Natural Science Foundation of China under grant No. 60806031, the Key Scientific Research of shaoxing under Grant No. 2007A21015, and the Special Project of Shanghai Nano-technology under grant No. 0852nm02400.

语种：英文

外文关键词：Amorphous silicon - Atomic force microscopy - Electric fields - Erbium compounds - Gate dielectrics - High resolution transmission electron microscopy - High-k dielectric - Leakage currents - Magnetron sputtering - Silica

外文摘要：Amorphous ErSiO films have been fabricated on p-type Si (001) substrates using rf magnetron sputtering technique. X-ray diffraction, high-resolution transmission electron microscopy, and atomic force microscopy were employed to investigate the samples. It is found that ErSiO film exhibits a flat surface, a sharp interface and superior electrical properties after post-deposition annealing in O(2) ambience for 30 min at 450A degrees C. The effective dielectric constant of the film is measured to be 14.2, and the effective oxide thickness reaches 1.9 nm, with a low leakage current density of 1.1x10(-4) A/cm(2) at an electric field of 1 MV cm(-1) after annealing at 450A degrees C. The obtained characteristics make the amorphous ErSiO films a promising substitute for SiO(2) as a high-k gate dielectric.