文献类型：期刊文献

英文题名：A model for the frequency dispersion of the high-k metal-oxide-semiconductor capacitance in accumulation

作者：Yao, B.[1,2];Fang, Z. B.[1];Zhu, Y. Y.[3];Ji, T.[3];He, G.[4]

机构：[1]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China;[2]Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China;[3]Shanghai Univ Elect Power, Dept Math & Phys, Shanghai 200090, Peoples R China;[4]Anhui Univ, Anhui Key Lab Informat Mat & Devices, Sch Phys & Mat Sci, Hefei 230039, Peoples R China

年份：2012

卷号：100

期号：22

外文期刊名：APPLIED PHYSICS LETTERS

收录：SCI-EXPANDED(收录号：WOS:000304823800036)、、WOS

基金：This work was supported by the National Natural Science Foundation of China (NNSFC) under Grant Nos. 60806031, 10804109, and 11004130, the Natural Science Foundation of Zhejiang Province of China under Grant No. Y6100596, the Outstanding Young Scientific Foundation of Anhui University (Grant no. KJJQ1103), and the Key Fundamental Project of Shanghai under Grant No. 10JC1405900.

语种：英文

外文关键词：Charge coupled devices - Dielectric devices - Dielectric materials - Dispersions - Electric resistance - Equivalent circuits - Erbium compounds - Gate dielectrics - High-k dielectric - Metals - MOS devices - Oxide semiconductors - Silicon compounds - Transistors

外文摘要：High-frequency capacitance-voltage measurements have been made on metal-oxide-semiconductor capacitors by using single crystalline Er2O3 high-k gate dielectrics. Based on our analysis, it has been found that frequency dispersion of Er2O3 capacitance in accumulation decreases consistently with the increase of the frequency. A correction model is proposed to explain these frequency dispersion phenomena and the capacitance-frequency equations are obtained from the impedance expression of the equivalent circuit. Based on the simulated capacitance-frequency, it can be concluded that frequency dispersion of Er2O3 capacitance in accumulation originates from the existence of the parasitic resistances, the series resistances, and the formed SiOx interfacial layer. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4722934]