文献类型：期刊文献

英文题名：Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

作者：Gao, J.[1,2];He, G.[1];Fang, Z. B.[3];Lv, J. G.[4];Liu, M.[5];Sun, Z. Q.[1]

机构：[1]Anhui Univ, Sch Phys & Mat Sci, Radiat Detect Mat & Devices Lab, Hefei 230039, Peoples R China;[2]Anhui Univ Sci & Technol, Sch Sci, Huainan 232001, Peoples R China;[3]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China;[4]Hefei Normal Univ, Dept Phys & Elect Engn, Hefei 230061, Peoples R China;[5]Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanostruct, Key Lab Mat Phys, Hefei 230031, Peoples R China

年份：2017

卷号：695

起止页码：2199

外文期刊名：JOURNAL OF ALLOYS AND COMPOUNDS

收录：SCI-EXPANDED(收录号：WOS:000391817600277)、、EI(收录号：20165203164581)、Scopus(收录号：2-s2.0-85006826378)、WOS

基金：The authors acknowledge the support from National Key Project of Fundamental Research (2013CB632705), National Natural Science Foundation of China (51572002, 51272159, 11474284, 51502005), Anhui Provincial Natural Science Foundation (1608085MA06), and Outstanding Young Scientific Foundation of Anhui University (KJJQ1103) and "211 project" of Anhui University.

语种：英文

外文关键词：High-k gate dielectrics; Interface quality; Band alignment; Electrical properties; Leakage current mechanism

外文摘要：Effects of nitrogen incorporation on the interfacial chemical bonding states, band alignment, electrical properties and leakage current conduction mechanisms of HfGdO-based metal-oxide-semiconductor (MOS) capacitors has been investigated by UV-Vis transmission spectroscopy, X-ray photoemission spectroscopy (XPS), and electrical measurements. XPS results indicate that incorporation of a moderate amount of nitrogen incorporation into HfGdO gate dielectrics can effectively suppress the formation of low-k GeO2 and Hf(Gd)-Ge-O interfacial layer at the interfacial region. Meanwhile, reduction in band gap and valence band offset and increase in conduction band offset have been observed after nitrogen incorporation. Electrical measurements based on MOS capacitors have shown that MOS capacitor with HfGdON/ Ge stacked gate dielectric with N-2 flow rate of 3 sccm exhibits small gate leakage current (1.08 x 10(-3) A/cm(2) at V-g = 1 V), almost disappeared hysteresis, and large dielectric constant (29.2). The involved leakage current conduction mechanisms for MOS capacitor devices with and without nitrogen incorporation also have been discussed in detail. (C) 2016 Elsevier B. V. All rights reserved.