文献类型：期刊文献

英文题名：Solar-driven overall water splitting over a S-scheme semiconductor heterojunction of 2D g-C₃N₄/1D LaNbON₂

作者：Gao, Jian[1];Xu, Gao[1];Liang, Qifeng[1];Xu, Xiaoxiang[2];Wang, Hailong[3];Liu, Shiyan[1];Ren, Jun[1];Fang, Zebo[1];Wei, Shunhang[1]

机构：[1]Shaoxing Univ, Zhejiang Engn Res Ctr MEMS, Shaoxing 312000, Peoples R China;[2]Tongji Univ, Sch Chem Sci & Engn, Shanghai 200092, Peoples R China;[3]Zhengzhou Univ Technol, Sch Chem Engn & Food, Zhengzhou 450044, Peoples R China

年份：2023

卷号：666

外文期刊名：APPLIED CATALYSIS A-GENERAL

收录：SCI-EXPANDED(收录号：WOS:001078230800001)、、EI(收录号：20233714727527)、Scopus(收录号：2-s2.0-85170699172)、WOS

基金：This work was supported by National Natural Science Foundation of China (Grant no. 51872186) , Henan Province Science and Technology Research Project (Grant no. 222102230107) , Science and Technology Program of Shaoxing (Grant no. 2022A11006) .

语种：英文

外文关键词：2Dg-C3N4; 1D LaNbON2; S-scheme heterojunction; Overall water splitting; Photocatalyst

外文摘要：g-C3N4 usually acts as the oxidation counterpart for overall water splitting reactions in semiconductor heterojunctions. Due to the poor water oxidation ability of g-C3N4, it is difficult to achieve efficient photocatalytic overall water splitting over g-C3N4-based heterojunctions. In this work, one-dimensional (1D) LaNbON2 with strong water oxidation ability is prepared for the first time, and combined with two-dimensional (2D) g-C3N4 to form semiconductor heterojunction by electrostatic self-assembly. The results of surface states, theoretical calculations, band structures and chemical probes indicate that the 2D g-C3N4 and the 1D LaNbON2 are tightly bonded through the electrostatic attraction and form a S-scheme type semiconductor heterojunction. In the heterojunction, the 1D LaNbON2 and the 2D g-C3N4 work as oxidation and reduction counterpart, respectively. The built-in electric field at their heterointerfaces effectively accelerates carrier separation. Thereby the solar-driven photocatalytic overall water splitting rate of the optimal 2D g-C3N4/1D LaNbON2 heterojunction is similar to 3.3 times as much as that of the 2D g-C3N4.