文献类型：期刊文献

英文题名：Interface Chemistry and Dielectric Optimization of TMA-Passivated high-k/Ge Gate Stacks by ALD-Driven Laminated Interlayers

作者：Wang, Die[1];He, Gang[1,2];Hao, Lin[1];Qiao, Lesheng[1];Fang, Zebo[3];Liu, Jiangwei[4]

机构：[1]Anhui Univ, Sch Phys & Mat Sci, Radiat Detect Mat & Devices Lab, Hefei 230601, Peoples R China;[2]Anhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Peoples R China;[3]Shaoxing Univ, Sch Math Informat, Shaoxing 312000, Peoples R China;[4]Natl Inst Mat Sci NIMS, Res Ctr Funct Mat, Ibaraki 3050044, Japan

年份：2020

卷号：12

期号：22

起止页码：25390

外文期刊名：ACS APPLIED MATERIALS & INTERFACES

收录：SCI-EXPANDED(收录号：WOS:000538515700091)、、WOS

基金：The authors acknowledge the support from National Natural Science Foundation of China (11774001), open fund for Discipline Construction, Institute of Physical Science and Information Technology, Anhui University (S01003101).

语种：英文

外文关键词：high-k gate dielectric; atomic layer deposition; interface chemistry; passivation layer; electrical properties

外文摘要：In the present study, a comparative study on the influence of different laminated stacks driven by aomic layer deposition (ALD) on the interfacial and electrcial properties of high-k/Ge gate stacks passivated by trimethylaluminum (TMA) has been performed in detail via X-ray photo-electron spectroscopy (XPS) and electrical measurements. XPS measurements indicate that HfO2/Al2O3/Ge gate stacks can effectively inhibit the formation of Ge suboxides and a low-k germanate layer. Compared to Al2O3/HfO2 and HfO2/Al2O3/HfO2 gate stacks, the HfO2/Al2O3/Ge metal oxide semiconductor (MOS) capacitors exhibited improved electrical performance, including a maximum permittivity of 18.15, disappearing hysteresis, an almost neglected flat band voltage of 0.01 V, and a minimum leakage current density of 3.82 X 10-8 A/cm(2) at room temperature. Especially, the leakage current mechanisms of Ge-MOS capacitors based on different laminated stacks measured at room temperature and low temperature (77-327 K) have been comprehensively analyzed. By comparing three different laminated gate stacks, it can be inferred that HfO2/Al2O3 /Ge gate stacks have a potential application prospect in Ge-based microelectronic devices.