文献类型：期刊文献

英文题名：Optoelectronic Evaluation and Loss Analysis of PEDOT: PSS/Si Hybrid Heterojunction Solar Cells

作者：Yang, Zhenhai[1];Fang, Zebo[2];Sheng, Jiang[1];Ling, Zhaoheng[1];Liu, Zhaolang[1];Zhu, Juye[1];Gao, Pingqi[1];Ye, Jichun[1]

机构：[1]Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China;[2]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China

年份：2017

卷号：12

期号：1

外文期刊名：NANOSCALE RESEARCH LETTERS

收录：SCI-EXPANDED(收录号：WOS:000397563800002)、、EI(收录号：20170203241706)、Scopus(收录号：2-s2.0-85008951553)、WOS

基金：This work was financially supported by the Zhejiang Provincial Natural Science Foundation (No. LY15A040001, LY14F040005, LR16F040002), National Natural Science Foundation of China (No. 51272159, 61674154, 61504036, 61404144), Major Project and Key S&T Program of Ningbo (No. 2016B10004, 2014B10026), and International S&T Cooperation Program of Ningbo (No. 2015D10021).

语种：英文

外文关键词：Hybrid solar cells; Optoelectronic loss; PEDOT:PSS/Si

外文摘要：The organic/silicon (Si) hybrid heterojunction solar cells (HHSCs) have attracted considerable attention due to their potential advantages in high efficiency and low cost. However, as a newly arisen photovoltaic device, its current efficiency is still much worse than commercially available Si solar cells. Therefore, a comprehensive and systematical optoelectronic evaluation and loss analysis on this HHSC is therefore highly necessary to fully explore its efficiency potential. Here, a thoroughly optoelectronic simulation is provided on a typical planar polymer poly (3,4-ethylenedioxy thiophene): polystyrenesulfonate (PEDOT: PSS)/Si HHSC. The calculated spectra of reflection and external quantum efficiency (EQE) match well with the experimental results in a full-wavelength range. The losses in current density, which are contributed by both optical losses (i. e., reflection, electrode shield, and parasitic absorption) and electrical recombination (i. e., the bulk and surface recombination), are predicted via carefully addressing the electromagnetic and carrier-transport processes. In addition, the effects of Si doping concentrations and rear surface recombination velocities on the device performance are fully investigated. The results drawn in this study are beneficial to the guidance of designing high-performance PEDOT: PSS/Si HHSCs.