文献类型：期刊文献

英文题名：Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfAlOX gate dielectrics

作者：Jin, P.[1];He, G.[1];Fang, Z. B.[2];Liu, M.[3];Xiao, D. Q.[1];Gao, J.[1];Jiang, S. S.[1];Li, W. D.[1];Sun, Z. Q.[1];Zhang, M.[1,4]

机构：[1]Anhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R China;[2]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China;[3]Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanostruct, Key Lab Mat Phys, Hefei 230031, Peoples R China;[4]Anhui Univ, Cooperat Innovat Res Ctr Weak Signal Detecting Ma, Hefei 230601, Peoples R China

年份：2017

卷号：43

期号：3

起止页码：3101

外文期刊名：CERAMICS INTERNATIONAL

收录：SCI-EXPANDED(收录号：WOS:000392769600027)、、WOS

基金：The authors acknowledge the support from National Key Project of Fundamental Research(2013CB632705), National Natural Science Foundation of China (51572002,11474284,51272159), Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China (J05015131), Anhui Provincial Natural Science Foundation (1608085MA06). Doctor Scientific Research Fund of Anhui University (J01001927), the Youth Core Teacher Fund of Anhui University (J01005111), the Foundation of Co-operative Innovation Research Center for Weak Signal-Detecting Materials and Devices Integration Anhui University (Y01008411).

语种：英文

外文关键词：High-k HfAlOx gate dielectrics; Sol-gel; Optical properties; Electrical properties; Leakage current transport mechanism

外文摘要：Deposition of HfAlOx gate dielectric films on n-type Si and quartz substrates by sol-gel technique has been performed and the optical, electrical characteristics of the as-deposited HfAlOx thin films as a function of annealing temperature have been investigated. The optical properties of HfAlOx thin films related to annealing temperature are investigated by ultraviolet-visible spectroscopy (UV-vis) and spectroscopy ellipsometry (SE). By measurement of UV-vis, average transmission of all the HfAlOx samples are about 85% owing to their uniform composition. And the increase in band gap has been observed with the increase of annealing temperature. Moreover, the increase of refractive index (n) and density with the increase of annealing temperature are obtained by SE measurements. Additionally, the electrical properties based on Al/Si/HfAlOx/Al capacitor are analyzed by means of the high frequency capacitance-voltage (C-V) and the leakage current density-voltage (J-V) characteristics. Results have shown that 400 degrees C-annealed sample demonstrates good electrical performance, including larger dielectric constant of 12.93 and lower leakage current density of 3.75x 10(-7) A/cm(2) at the gate voltage of 1 V. Additionally, the leakage current conduction mechanisms as functions of annealing temperatures are also discussed systematically.