文献类型：期刊文献

英文题名：Influences of Ion-Induced Defects on Growth of Copper-Phthalocyanine Film on Graphene Substrates

作者：Dou, Weidong[1,2,3];Yang, Qingdan[1,2];Lee, Chun-Sing[1,2]

机构：[1]City Univ Hong Kong, Ctr Super Diamond & Adv Films COSDAF, Hong Kong, Hong Kong, Peoples R China;[2]City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China;[3]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China

年份：2012

卷号：116

期号：36

起止页码：19278

外文期刊名：JOURNAL OF PHYSICAL CHEMISTRY C

收录：SCI-EXPANDED(收录号：WOS:000308631300027)、、EI(收录号：20123915459575)、Scopus(收录号：2-s2.0-84866419750)、WOS

基金：This work is supported by the Research Grant Council of Hong Kong (Grant No. CityU 101809), the National Natural Science Foundation of China (Grant No. 61106131), and the Zhejiang Provincial Natural Science Foundation of China (Grant No. Y6110072).

语种：英文

外文关键词：Argon - Atomic force microscopy - Copper - Copper metallography - Crystallization - Electron energy levels - Electron energy loss spectroscopy - Electron scattering - Energy dissipation - Field effect transistors - Film growth - Ions - Nucleation - Sheet metal - Substrates - Surface defects

外文摘要：Influences of argon ion-induced defects on growth of copper-phthalocyanine (CuPc) films on graphene were studied with atomic force microscope, X-ray diffraction, and high-resolution electron energy-loss spectroscopy (HREELS). Points defects and edges on graphene were found to be favorable sites for initial nucleation of CuPc. On as-grown graphene substrate with low defect density, CuPc nucleation begins at edges of the graphene sheets and then further grows into large islands with regular edges and smooth surfaces. On graphene subjected to argon ion treatment, which is known to induce surface defects, CuPc begins to nucleate at the defect positions, giving rise to crystals of much smaller sizes than those grown on a pristine graphene substrate. Such ion-induced modifications are correlated changes in HREELS spectra of the corresponding CuPc films.