文献类型：期刊文献

英文题名：Robust magnetoresistance in TaAs2 under pressure up to about 37 GPa

作者：Wang, Hongyuan[1,2,3];Pei, Cuiying[1];Su, Hao[1,2];Yu, Zhenhai[1];Li, Mingtao[4];Xia, Wei[1,2,3];Liu, Xiaolei[1,2];Liang, Qifeng[5];Zhao, Jinggeng[6];Zhou, Chunyin[7];Yu, Na[1,8];Wang, Xia[1,8];Zou, Zhiqiang[1,8];Wang, Lin[4];Qi, Yanpeng[1];Guo, Yanfeng[1]

机构：[1]ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China;[2]Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China;[3]Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China;[4]Ctr High Pressure Sci & Technol Adv Res, Shanghai 201203, Peoples R China;[5]Univ Shaoxing, Dept Phys, Shaoxing 312000, Peoples R China;[6]Harbin Inst Technol, Dept Phys, Harbin 150080, Heilongjiang, Peoples R China;[7]Chinese Acad Sci, Shanghai Adv Res Inst, Shanghai Synchrotron Radiat Facil, Shanghai 201204, Peoples R China;[8]ShanghaiTech Univ, Analyt Instrumentat Ctr, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China

年份：2019

卷号：115

期号：12

外文期刊名：APPLIED PHYSICS LETTERS

收录：SCI-EXPANDED(收录号：WOS:000487038900014)、、EI(收录号：20193907465583)、Scopus(收录号：2-s2.0-85072512551)、WOS

基金：The authors acknowledge the support from the Natural Science Foundation of Shanghai (Grant No. 17ZR1443300), the Shanghai Pujiang Program (Grant No. 17PJ1406200), the National Natural Science Foundation of China (Grant No. 11874264), and the Natural Science Foundation of Heilongjiang Province (Grant No. A2017004). We thank Lili Zhang and Shuai Yan (from BL15U1 beamline, Shanghai Synchrotron Radiation Facility in China) for help in high-pressure synchrotron X-ray diffraction (SXRD) measurements.

语种：英文

外文关键词：Calculations - Electronic structure - Magnetoresistance

外文摘要：The extremely large magnetoresistance (XMR) in nonmagnetic semimetals has inspired growing interest owing to both intriguing physics and potential applications. We report the results of synchrotron X-ray diffraction and electrical transport measurements on TaAs2 under pressure up to similar to 37 GPa, which revealed an anisotropic compression of the unit cell, formation of unusual As-As bonds above 9.5 GPa, and enhancement of metallicity. Interestingly, the MR of TaAs2 under pressure changed gently, which at 1.7 GPa is 96.6% and at 36.6 GPa is still 36.7%. The almost robust MR under pressure could be related to the nearly stable electronic structure unveiled by the ab initio calculations. The discovery would expand the potential use of XMR even under high pressure.