文献类型：期刊文献

中文题名：Annealing effects on the structure and electrical characteristics of amorphous Er_2O_3 films

英文题名：Annealing effects on the structure and electrical characteristics of amorphous Er2O3 films

作者：Fang Ze-Bo[1,2];Zhu Yan-Yan[1];Wang Jia-Le[1];Jiang Zui-Min[1]

机构：[1]Fudan Univ, Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R China;[2]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China

年份：2009

卷号：18

期号：8

起止页码：3542

中文期刊名：中国物理B：英文版

外文期刊名：CHINESE PHYSICS B

收录：CSTPCD、、Scopus、CSCD2011_2012、CSCD

基金：Project supported by the China Postdoctoral Science Foundation and Shaoxing Science and Technology Commission (Grant No 2007A21015), also partially supported by the Project of Shanghai Nanotechnology (Grant No 0852NM02400) and the National Natural Science Foundation of China (Grant No 60806031).

语种：英文

中文关键词：退火温度;非晶薄膜;结构模型;氧化铒;高分辨透射电子显微镜;电特性;Si(001)衬底;结构演变

外文关键词：Er2O3; gate dielectric; amorphous

中文摘要：Amorphous Er 2 O 3 films are deposited on Si (001) substrates by using reactive evaporation.This paper reports the evolution of the structure,morphology and electrical characteristics with annealing temperatures in an oxygen ambience.X-ray diffraction and high resolution transimission electron microscopy measurement show that the films remain amorphous even after annealing at 700 C.The capacitance in the accumulation region of Er 2 O 3 films annealed at 450 C is higher than that of as-deposited films and films annealed at other temperatures.An Er 2 O 3 /ErO x /SiO x /Si structure model is proposed to explain the results.The annealed films also exhibit a low leakage current density (around 1.38 × 10 4 A/cm 2 at a bias of 1 V) due to the evolution of morphology and composition of the films after they are annealed.

外文摘要：Amorphous Er2O3 films are deposited on Si (001) substrates by using reactive evaporation. This paper reports the evolution of the structure, morphology and electrical characteristics with annealing temperatures in an oxygen ambience. X-ray diffraction and high resolution transimission electron microscopy measurement show that the films remain amorphous even after annealing at 700 degrees C. The capacitance in the accumulation region of Er2O3 films annealed at 450 degrees C is higher than that of as-deposited films and films annealed at other temperatures. An Er2O3/ErOx/SiOx/Si structure model is proposed to explain the results. The annealed films also exhibit a low leakage current density (around 1.38 x 10(-4) A/cm(2) at a bias of -1 V) due to the evolution of morphology and composition of the films after they are annealed.