文献类型：期刊文献

英文题名：Interface Chemistry Evolution and Leakage Current Conduction Mechanism Determination in Rare-Earth-Doped Hf-Based Gate Dielectrics

作者：Liu, Wenjun[1];He, Gang[2];Wang, Die[2];Yu, Hai[2];Gao, Qian[2];Liu, Yanmei[2];Fang, Zebo[3]

机构：[1]Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China;[2]Anhui Univ, Sch Mat Sci & Engn, Hefei 230601, Peoples R China;[3]Shaoxing Univ, Sch Math Informat, Shaoxing 312000, Peoples R China

年份：2022

卷号：69

期号：1

起止页码：242

外文期刊名：IEEE TRANSACTIONS ON ELECTRON DEVICES

收录：SCI-EXPANDED(收录号：WOS:000732284100001)、、EI(收录号：20215111368801)、Scopus(收录号：2-s2.0-85121389063)、WOS

基金：This work was supported by the National Natural Science Foundation of China under Grant 11774001, Grant 61774041, and Grant 51872186.

语种：英文

外文关键词：Ge MOS capacitor; high-k gate dielectrics; interface chemistry; leakage conduction mechanism; Rare-Earth (RE) doping

外文摘要：In this work, the effects of Rare-Earth (RE) doping (Y, Gd, Dy, Yb) in HfO2 on the interface chemistry and leakage current conduction mechanism of Ge-MOS devices have been explored. The electrical experimental results have indicated that HfREOx (RE = Gd and Dy) show excellent performance, including the reduced flat-band voltage, almost disappeared hysteresis, and the decreased leakage current, which can be attributed to the trade off of performance between lanthanide-based oxides and HfO2. X-ray photoelectron spectroscopy (XPS) measurements also display that HfGdOx and HfDyOx gate dielectrics can effectively inhibit the formation of unstable Ge suboxides and low-k germanate interface layer, leading to the reduced defect state at/near the interface and the improved electrical performance. In addition, the doping element-dependent leakage current conduction mechanism of Ge-based MOS devices under low temperature has been investigated systematically. As a result, it can be inferred that RE doping has a significant impact on Hf-based MOS capacitors, and Hf-based gate dielectrics doped with heavy RE elements show excellent application prospects in future microelectronic devices.