文献类型：期刊文献

英文题名：Electronic-Grade High-Quality Perovskite Single Crystals by a Steady Self-Supply Solution Growth for High-Performance X-ray Detectors

作者：Wang, Wenzhen[1];Meng, Hua[1];Qi, Huanzhen[1];Xu, Haitao[2];Du, Wenbin[1];Yang, Yiheng[1];Yi, Yongsheng[1];Jing, Shengqi[1];Xu, Shanhu[1];Hong, Feng[3];Qin, Juan[1];Huang, Jian[1];Xu, Zhan[1];Zhu, Yanyan[1];Xu, Run[1];Lai, Jianming[1];Xu, Fei[3];Wang, Linjun[1];Zhu, Jingtao[4]

机构：[1]Shanghai Univ, Sch Mat Sci & Engn, Nanchen Rd, Shanghai 200444, Peoples R China;[2]Shaoxing Univ, Dept Phys, 508 Huancheng West Rd, Shaoxing 312000, Peoples R China;[3]Shanghai Univ, SHU Solar E R&D Lab, Dept Phys, Coll Sci,Shanghai Key Lab High Temp Superconducto, 99 Shangda Rd, Shanghai 200444, Peoples R China;[4]Tongji Univ, Sch Phys Sci & Engn, MOE Key Lab Adv Microstruct Mat, 1239 Siping Rd, Shanghai 200092, Peoples R China

年份：2020

卷号：32

期号：33

外文期刊名：ADVANCED MATERIALS

收录：SCI-EXPANDED(收录号：WOS:000545589400001)、、EI(收录号：20202808912082)、Scopus(收录号：2-s2.0-85087480733)、WOS

基金：W.W. and H.M. contributed equally to this work. This work was supported by National Natural Science Foundation of China (Grant Nos. 11905133, 11875204, and U1932167), Natural Science Foundation of Shanghai (Grant No. 17ZR1409600), and Natural Science Foundation of Zhejiang province (Grant No. LQ19F040002).

语种：英文

外文关键词：high carrier transport properties; perovskite single crystals; self-supply solution growth; X-ray detectors

外文摘要：High-quality perovskite single crystals with large size are highly desirable for the fundamental research and high energy detection application. Here, a simple and convenient solution method, featuring continuous-mass transport process (CMTP) by a steady self-supply way, is shown to keep the growth of semiconductor single crystals continuously stable at a constant growth rate until an expected crystal size is achieved. A significantly reduced full width at half-maximum (36 arcsec) of the (400) plane from the X-ray rocking curve indicates a low angular dislocation of 6.8 x 10(6)cm(-2)and hence a higher crystalline quality for the CH3NH3PbI3(MAPbI(3)) single crystals grown by CMTP as compared to the conventional inverse temperature crystallization (ITC) method. Furthermore, the CMTP-based single crystals have lower trap density, reduced by nearly 200% to 4.5 x 10(9)cm(-3), higher mobility increased by 187% to 150.2 cm(2)V(-1)s(-1), and higher mobility-lifetime product increased by around 450% to 1.6 x 10(-3)cm(2)V(-1), as compared with the ITC-grown reference sample. The high performance of the CMTP-based MAPbI(3)X-ray detector is comparable to that of a traditional high-quality CdZnTe device, indicating the CMTP method as being a cost-efficient strategy for high-quality electronic-grade semiconductor single crystals.